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MB85R2002 Datasheet(PDF) 1 Page - Fujitsu Component Limited. |
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MB85R2002 Datasheet(HTML) 1 Page - Fujitsu Component Limited. |
1 / 12 page FUJITSU MICROELECTRONICS DATA SHEET Copyright©2007-2009 FUJITSU MICROELECTRONICS LIMITED All rights reserved 2009.8 Memory FRAM CMOS 2 M Bit (128 K × 16) MB85R2002 ■ DESCRIPTIONS The MB85R2002 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 16 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies. The MB85R2002 is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R2002 can be used for 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM. The MB85R2002 uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM. ■ FEATURES • Bit configuration : 131,072 words × 16 bits • Read/write endurance : 1010 times/bit • Operating power supply voltage : 3.0 V to 3.6 V • Operating temperature range : −40 °C to +85 °C • Data retention : 10 years ( +55 °C) •LB and UB data byte control • Package : 48-pin plastic TSOP (1) DS05-13108-4E |
Similar Part No. - MB85R2002_09 |
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Similar Description - MB85R2002_09 |
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