MITSUBISHI RF POWER MODULE

RoHS COMPLIANCE

RA60H4047M1

RA60H4047M1

MITSUBISHI ELECTRIC

3

7/9

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

PRECAUTIONS, RECOMMENDATIONS, and APPLICATION INFORMATION:

Construction:

This module consists of a glass-epoxy substrate soldered onto a copper flange. For mechanical protection, a metal

cap is attached (which makes the improvement of RF radiation easy). The MOSFET transistor chips are die

bonded onto metal, wire bonded to the substrate, and coated with resin. Lines on the substrate (eventually

inductors), chip capacitors, and resistors form the bias and matching circuits. Wire leads soldered onto the

glass-epoxy substrate provide the DC and RF connection.

Following conditions must be avoided:

a) Bending forces on the glass-epoxy substrate (for example, by driving screws or from fast thermal changes)

b) Mechanical stress on the wire leads (for example, by first soldering then driving screws or by thermal expansion)

c) Defluxing solvents reacting with the resin coating on the MOSFET chips (for example, Trichloroethylene)

d) Frequent on/off switching that causes thermal expansion of the resin

e) ESD, surge, overvoltage in combination with load VSWR, and oscillation

ESD:

This MOSFET module is sensitive to ESD voltages down to 1000V. Appropriate ESD precautions are required.

Mounting:

A thermal compound between module and heat sink is recommended for low thermal contact resistance.

The module must first be screwed to the heat sink, then the leads can be soldered to the printed circuit board.

M3 screws are recommended with a tightening torque of 0.4 to 0.6 Nm.

Soldering and Defluxing:

This module is designed for manual soldering.

The leads must be soldered after the module is screwed onto the heat sink.

The temperature of the lead (terminal) soldering should be lower than 350°C and shorter than 3 second.

Ethyl Alcohol is recommend for removing flux. Trichloroethylene solvents must not be used (they may cause

bubbles in the coating of the transistor chips which can lift off the bond wires).

Thermal Design of the Heat Sink:

Stage

(W)

(W)

(°C/W)

(A)

(V)

1

st

0.05

5.0

2.1

0.8

2

nd

5.0

60.0

0.5

9.8

12.5

When mounting the module with the thermal resistance of 0.33 °C/W, the channel temperature of each stage

transistor is:

The 175°C maximum rating for the channel temperature ensures application under derated conditions.