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RoHS

M/A-COM Products

Rev. V5

MADP-042XX5-13060 Series

ADVANCED:

Data Sheets contain information regarding a product M/A-COM is considering for

development. Performance is based on target specifications, simulated results, and/or prototype

measurements. Commitment to develop is not guaranteed.

PRELIMINARY:

Data Sheets contain information regarding a product M/A-COM has under develop-

ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has

been fixed. Engineering samples and/or test data may be available. Commitment to produce in

volume is not guaranteed.

Features

Description

This device is a silicon, glass PIN diode surmount chip

This device features two silicon pedestals embedded in a

low loss, low dispersion glass. The diode is formed on the

top of one pedestal and connections to the backside of the

device are facilitated by making the pedestal sidewalls

electrically conductive. Selective backside metallization is

applied producing a surface mount device. This vertical

topology provides for exceptional heat transfer. The

topside is fully encapsulated with silicon nitride and has an

additional polymer layer for scratch and impact protection.

These protective coatings prevent damage to the junction

and the anode air-bridge during handling and assembly.

Applications

These packageless devices are suitable for moderate

incident power applications, ≤ 10W/C.W. or where the

peak power is ≤ 50W, pulse width is ≤ 1μS, and duty cycle

is ≤ 0.01%. Their low parasitic inductance, 0.4 nH, and

excellent RC constant

choice for higher frequency switch elements when

compared to their plastic package counterparts.

INCHES

MM

MIN

MAX

MIN

MAX

A

0.040

0.042

1.025

1.075

B

0.021

0.023

0.525

0.575

C

0.004

0.008

0.102

0.203

D

0.013

0.015

0.325

0.375

E

0.011

0.013

0.275

0.325

F

0.013

0.015

0.325

0.375

G

0.019

0.021

0.475

0.525

DIM

Parameter

Absolute Maximum

MADP-042…-13060

305

405

505

905

C.W. Incident Power dBm

40

44

43

35

Forward Current

250 mA

Reverse Voltage

-80 V

Operating Temperature

-55°C to +125°C

Storage Temperature

-55°C to +150°C

Junction Temperature

+175°C

Mounting Temperature

+280°C for 10 seconds

Absolute Maximum Ratings

(unless otherwise specified)

1. Exceeding these limits may cause permanent damage.

G

D

E

F

Notes:

1. Backside metal: 0.1 μM thick.

2. Yellow hatched areas indicate backside ohmic gold contacts.

3. All devices have the same outline dimensions ( A to G).