CM100DU-34KA_09 datasheet(4/4 Pages) MITSUBISHI

Part #	CM100DU-34KA

Description	IGBT MODULES HIGH POWER SWITCHING USE

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Manufacturer	MITSUBISHI [Mitsubishi Electric Semiconductor]

Direct Link	http://www.mitsubishichips.com

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4 / 4 page

4

Feb. 2009

MITSUBISHI IGBT MODULES

CM100DU-34KA

HIGH POWER SWITCHING USE

101

102

23

5

7

103

23

5

7

101

102

2

3

5

7

103

2

3

5

7

trr

Irr

REVERSE RECOVERY CHARACTERISTICS

OF FREE-WHEEL DIODE

(TYPICAL)

EMITTER CURRENT IE (A)

Conditions:

VCC = 1000V

VGE =

±15V

RG = 3.1

Ω

Tj = 25

°C

Inductive load

101

10–3

10–5

10–4

100

7

5

3

2

10–2

7

5

3

2

10–1

7

5

3

2

7

5

3

2

10–323 5 7

23 5 7

101

10–2

10–1

100

10–3

7

5

3

2

10–2

7

5

3

2

10–1

3

2

23 5 7

Single Pulse

TC = 25

°C

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(IGBT part & FWDi part)

TIME (s)

IGBT part:

Per unit base = Rth(j–c) = 0.14K/ W

FWDi part:

Per unit base = Rth(j–c) = 0.24K/ W

0

4

8

16

12

20

0

100

300

600

200

500

400

GATE CHARGE

CHARACTERISTICS

(TYPICAL)

GATE CHARGE QG (nC)

VCC = 800V

VCC = 1000V

IC = 100A

101

102

57

103

23

5

7

102

2

3

5

7

103

2

3

5

7

104

2

3

5

7

101

23

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

COLLECTOR CURRENT IC (A)

Conditions:

VCC = 1000V

VGE =

±15V

RG = 3.1

Ω

Tj = 125

°C

Inductive load

td(off)

td(on)

tf

tr

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CM100DU-34KA Datasheet(PDF) 4 Page - Mitsubishi Electric Semiconductor

CM100DU-34KA Datasheet(HTML) 4 Page - Mitsubishi Electric Semiconductor

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