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CM50DU-24F Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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CM50DU-24F Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
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2 / 4 page  Feb. 2009 2 VCE = VCES, VGE = 0V ±VGE = VGES, VCE = 0V VCC = 600V, IC = 50A, VGE = 15V VCC = 600V, IC = 50A VGE = ±15V RG = 6.3 Ω, Inductive load IE = 50A IE = 50A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied*2 (1/2 module) Case temperature measured point is just under the chips IC = 5.0mA, VCE = 10V IC = 50A, VGE = 15V VCE = 10V VGE = 0V 1200 ±20 50 100 50 100 320 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 3.5 ~ 4.5 310 MITSUBISHI IGBT MODULES CM50DU-24F HIGH POWER SWITCHING USE V V A A A A W °C °C Vrms N • m N • m g mA µA nF nF nF nC ns ns ns ns µC V K/W K/W K/W K/W Ω — — 1.8 1.9 — — — 550 — — — — — 2.1 — — — 0.07 — — — — — — — — — — — — — — — — — — — — — 6.3 6V V 5 ns 1 20 2.4 — 20 0.85 0.5 — 100 50 300 300 150 — 3.2 0.39 0.70 — 0.31*3 63 Collector cutoff current Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Contact thermal resistance Thermal resistance External gate resistance Gate-emitter threshold voltage Collector-emitter saturation voltage Thermal resistance*1 ICES IGES Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Symbol Parameter VGE(th) VCE(sat) Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150 °C. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Collector-emitter voltage Gate-emitter voltage Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Weight G-E Short C-E Short TC = 25 °C Pulse (Note 2) TC = 25 °C Pulse (Note 2) TC = 25 °C Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M6 screw Typical value Symbol Parameter Collector current Emitter current Torque strength Conditions Unit Ratings VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — Unit Typ. Limits Min. Max. — Test conditions 7 MAXIMUM RATINGS (Tj = 25 °C, unless otherwise specified) ELECTRICAL CHARACTERISTICS (Tj = 25 °C, unless otherwise specified) Tj = 25 °C Tj = 125 °C |
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