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STM32F101C8T6TR Datasheet(PDF) 47 Page - STMicroelectronics

Part # STM32F101C8T6TR
Description  Medium-density access line, ARM-based 32-bit MCU with 64 or 128 KB Flash, 6 timers, ADC and 7 communication interfaces
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F101C8T6TR Datasheet(HTML) 47 Page - STMicroelectronics

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STM32F101x8, STM32F101xB
Electrical characteristics
Doc ID 13586 Rev 12
47/81
5.3.7
Internal clock source characteristics
The parameters given in Table 23 are derived from tests performed under the ambient
temperature and VDD supply voltage conditions summarized in Table 8.
High-speed internal (HSI) RC oscillator
Low-speed internal (LSI) RC oscillator
Wakeup time from low-power mode
The wakeup times given in Table 25 are measured on a wakeup phase with an 8-MHz HSI
RC oscillator. The clock source used to wake up the device depends from the current
operating mode:
Stop or Standby mode: the clock source is the RC oscillator
Sleep mode: the clock source is the clock that was set before entering Sleep mode.
Table 23.
HSI oscillator characteristics(1)
1.
VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
8
MHz
ACCHSI
Accuracy of the HSI
oscillator
User-trimmed with the RCC_CR
register(2)
2.
Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from
the ST website www.st.com.
1(3)
3.
Guaranteed by design, not tested in production.
%
Factory-
calibrated(4)
4.
Based on characterization, not tested in production.
TA = –40 to 105 °C
–2
2.5
%
TA = –10 to 85 °C
–1.5
2.2
%
TA = 0 to 70 °C
–1.3
2
%
TA = 25 °C
–1.1
1.8
%
tsu(HSI)
(4)
HSI oscillator
startup time
12
µs
IDD(HSI)
(4)
HSI oscillator power
consumption
80
100
µA
Table 24.
LSI oscillator characteristics (1)
1.
VDD = 3 V, TA = –40 to 85 °C unless otherwise specified.
Symbol
Parameter
Min
Typ
Max
Unit
fLSI
(2)
2.
Based on characterization, not tested in production.
Frequency
30
40
60
kHz
tsu(LSI)
(3)
3.
Guaranteed by design, not tested in production.
LSI oscillator startup time
85
µs
IDD(LSI)
(3)
LSI oscillator power consumption
0.65
1.2
µA


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