 |
 |
|
| M53D128168A-10BAIG |
|
|||||||||||||||||
 ESMT
|
| |||||||||||||||||
|
2 page 
ESMT M53D128168A Operation Temperature Condition -40°C~85°C Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2008 Revision : 1.0 2/46 Pin Arrangement 60 Ball BGA (8x13mm) TOP View VSSQ DQ14 DQ12 DQ10 DQ8 NC A B C D E F G H J K L M DQ15 VDDQ VSSQ VDDQ VSSQ VSS CLK NC A11 A8 A6 A4 VSS DQ13 DQ11 DQ9 UDQS UDM CLK CKE A9 A7 A5 VSS VDDQ DQ1 DQ3 DQ5 DQ7 NC VDD DQ2 DQ4 DQ6 LDQS LDM WE RAS BA1 A0 A2 VDD DQ0 VSSQ VDDQ VSSQ VDDQ VDD CAS CS BA0 A10/AP A1 A3 123 78 9 Pin Description Pin Name Function Pin Name Function A0~A11, BA0,BA1 Address inputs - Row address A0~A11 - Column address A0~A8 A10/AP : AUTO Precharge BA0, BA1 : Bank selects (4 Banks) LDM, UDM DM is an input mask signal for write data. LDM corresponds to the data on DQ0~DQ7; UDM correspond to the data on DQ8~DQ15. DQ0~DQ15 Data-in/Data-out CLK, CLK Clock input RAS Row address strobe CKE Clock enable CAS Column address strobe CS Chip select WE Write enable VDDQ Supply Voltage for DQ VSS Ground VSSQ Ground for DQ VDD Power NC No connection LDQS, UDQS Bi-directional Data Strobe. LDQS corresponds to the data on DQ0~DQ7; UDQS correspond to the data on DQ8~DQ15. |
