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M52S64164A-10BG Datasheet(PDF) 4 Page - Elite Semiconductor Memory Technology Inc. |
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M52S64164A-10BG Datasheet(HTML) 4 Page - Elite Semiconductor Memory Technology Inc. |
4 / 47 page ESMT M52S64164A Elite Semiconductor Memory Technology Inc. Publication Date: Sep. 2008 Revision: 1.4 4/47 DC CHARACTERISTICS Recommended operating condition unless otherwise noted,TA = 0 to 70 C ° Version Parameter Symbol Test Condition CAS Latency -7.5 -10 Unit Note Operating Current (One Bank Active) ICC1 Burst Length = 1 tRC ≥ tRC (min), tCC ≥ tCC (min), IOL= 0mA 60 50 mA 1 ICC2P CKE ≤ VIL(max), tCC =15ns 1 mA Precharge Standby Current in power-down mode ICC2PS CKE ≤ VIL(max), CLK ≤ VIL(max), tCC = ∞ 0.5 mA ICC2N CKE ≥ VIH(min), CS ≥ VIH(min), tCC =10ns Input signals are changed one time during 20ns 10 mA Precharge Standby Current in non power-down mode ICC2NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable 7 mA ICC3P CKE ≤ VIL(max), tCC =15ns 5 Active Standby Current in power-down mode ICC3PS CKE ≤ VIL(max), CLK ≤ VIL(max), tCC = ∞ 5 mA ICC3N CKE ≥ VIH(min), CS ≥ VIH(min), tCC=15ns Input signals are changed one time during 2clks All other pins ≥ VDD-0.2V or ≤ 0.2V 50 mA Active Standby Current in non power-down mode (One Bank Active) ICC3NS CKE ≥ VIH (min), CLK ≤ VIL(max), tCC= ∞ Input signals are stable 40 mA Operating Current (Burst Mode) ICC4 IOL= 0mA, Page Burst All Band Activated, tCCD = tCCD (min) 105 85 mA 1 Refresh Current ICC5 tRC ≥ tRC(min) 115 110 mA 2 TCSR range 70 C ° 4 Banks 420 2 Bank 350 1 Bank 300 Self Refresh Current ICC6 CKE ≤ 0.2V 1/2 Bank 300 uA Deep Power Down Current ICC7 CKE ≤ 0.2V 50 uA Note: 1.Measured with outputs open. Addresses are changed only one time during tCC(min). 2.Refresh period is 64ms. Addresses are changed only one time during tCC(min). |
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