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8

8 - 374

Absolute Maximum Ratings

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Typical Supply

Current vs. Vdd (Rbias = 10kΩ)

HMC817LP4E

v00.1108

SMT GaAs PHEMT DUAL CHANNEL

LOW NOISE AMPLIFIER, 550 - 1200 MHz

Drain Bias Voltage (Vdd)

+6V

RF Input Power (RFIN)

(Vdd = +5 Vdc)

+10 dBm

Channel Temperature

150 °C

Continuous Pdiss (T= 85 °C)

(derate 16.67 mW/°C above 85 °C)

1.08 W

Thermal Resistance

(channel to ground paddle)

60 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C

Vdd (V)

Idd (mA)

2.7

24

3.0

34

3.3

44

4.5

82

5.0

95

5.5

105

Note: Amplifier will operate over full voltage ranges shown above.

[1] Vdd = 5V [2] Vdd = 3V

-40

-30

-20

-10

0

0.5

0.6

0.7

0.8

0.9

1

1.1

1.2

1.3

RFIN1 TO RFOUT2

RFIN2 TO RFOUT1

FREQUENCY (GHz)

-1

-0.5

0

0.5

1

0.5

0.6

0.7

0.8

0.9

1

1.1

1.2

1.3

FREQUENCY (GHz)

-2

-1

0

1

2

0.5

0.6

0.7

0.8

0.9

1

1.1

1.2

1.3

FREQUENCY (GHz)

Absolute Bias Register for Idd

Range & Recommended Bias Resistor

Vdd (V)

Rbias Ω

Idd (mA)

Min

Max

Recommended

3V

10k

Open

circuit

10k

34

5V

0

Open

circuit

820

58

2k

78

10k

95

With Vdd = 3V Rbias <10k is not recommended and may result in

LNA becoming conditionally unstable.