M52D64164A-10TG datasheet(6/48 Pages) ESMT

Part #	M52D64164A-10TG

Description	1M x 16 Bit x 4 Banks Mobile Synchronous DRAM

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Manufacturer	ESMT [Elite Semiconductor Memory Technology Inc.]

Direct Link	http://www.esmt.com.tw/index.asp

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6 / 48 page

ESMT

M52D64164A

Elite Semiconductor Memory Technology Inc.

Publication Date: Jul. 2009

Revision: 1.6

6/48

AC CHARACTERISTICS (AC operating conditions unless otherwise noted)

-10

Parameter

Symbol

Min

Max

Unit

Note

CAS Latency =3

10

CLK cycle time

CAS Latency =2

tCC

15

1000

ns

1

CAS Latency =3

9

CLK to valid

output delay

CAS Latency =2

tSAC

13.5

ns

1

Output data hold time

tOH

2.5

ns

2

CLK high pulse width

tCH

3

ns

3

CLK low pulse width

tCL

3

ns

3

Input setup time

tSS

2.5

ns

3

Input hold time

tSH

1

ns

3

CLK to output in Low-Z

tSLZ

1

ns

2

CAS Latency =3

9

CLK to output in

Hi-Z

CAS Latency =2

tSHZ

13.5

ns

-

*All AC parameters are measured from half to half.

Note: 1.Parameters depend on programmed CAS latency.

2.If clock rising time is longer than 1ns,(tr/2-0.5)ns should be added to the parameter.

3.Assumed input rise and fall time (tr & tf)=1ns.

If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr+ tf)/2-1]ns should be added to the

parameter.

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M52D64164A-10TG Datasheet(PDF) 6 Page - Elite Semiconductor Memory Technology Inc.

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