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M52D16161A Datasheet(PDF) 3 Page - Elite Semiconductor Memory Technology Inc.

Part # M52D16161A
Description  512K x 16Bit x 2Banks Mobile Synchronous DRAM
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Manufacturer  ESMT [Elite Semiconductor Memory Technology Inc.]
Direct Link  http://www.esmt.com.tw/index.asp
Logo ESMT - Elite Semiconductor Memory Technology Inc.

M52D16161A Datasheet(HTML) 3 Page - Elite Semiconductor Memory Technology Inc.

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ESMT
M52D16161A
Operation Temperature Condition -40
°C~85°C
Elite Semiconductor Memory Technology Inc.
Publication Date : Sep. 2009
Revision : 1.1
3/32
DQ0 ~ 15
Data Input / Output
Data inputs/outputs are multiplexed on the same pins.
VDD/VSS
Power Supply/Ground
Power and ground for the input buffers and the core logic.
VDDQ/VSSQ
Data Output Power/Ground
Isolated power supply and ground for the output buffers to provide improved
noise immunity.
N.C/RFU
No Connection/
Reserved for Future Use
This pin is recommended to be left No Connection on the device.
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VIN,VOUT
-1.0 ~ 2.6
V
Voltage on VDD supply relative to VSS
VDD,VDDQ
-1.0 ~ 2.6
V
Storage temperature
TSTG
-55 ~ + 150
C
°
Power dissipation
PD
0.7
W
Short circuit current
IOS
50
mA
Note: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA= -40 C
°
~ 85 C
°
)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
VDD,VDDQ
1.7
1.8
1.9
V
Input logic high voltage
VIH
0.8 x VDDQ
1.8
VDDQ+0.3
V
1
Input logic low voltage
VIL
-0.3
0
0.3
V
2
Output logic high voltage
VOH
VDDQ - 0.2
-
-
V
IOH =-0.1mA
Output logic low voltage
VOL
-
-
0.2
V
IOL = 0.1mA
Input leakage current
IIL
-10
-
10
uA
3
Output leakage current
IOL
-10
-
10
uA
4
Note:
1.VIH (max) = 2.2V AC for pulse width
3ns acceptable.
2.VIL (min) = -1.0V AC for pulse width
3ns acceptable.
3.Any input 0V
VIN VDDQ, all other pins are not under test = 0V.
4.Dout is disabled, 0V
VOUT VDDQ.
CAPACITANCE (V
DD = 1.8V, TA = 25
C
°
, f = 1MHz)
Pin
Symbol
Min
Max
Unit
CLOCK
CCLK
2.0
4.0
pF
RAS , CAS , WE , CS , CKE, LDQM,
UDQM
CIN
2.0
4.0
pF
ADDRESS
CADD
2.0
4.0
pF
DQ0 ~DQ15
COUT
3.5
6.0
pF


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