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M24L28256DA Datasheet(PDF) 3 Page - Elite Semiconductor Memory Technology Inc. |
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M24L28256DA Datasheet(HTML) 3 Page - Elite Semiconductor Memory Technology Inc. |
3 / 10 page ESMT M24L28256DA Elite Semiconductor Memory Technology Inc. Publication Date : Jul. 2007 Revision : 1.0 3/10 Maximum Ratings (Above which the useful life may be impaired. For user guide-lines, not tested.) Storage Temperature ...................................–65°C to +150°C Ambient Temperature with Power Applied ..............................................–40°C to +85°C Supply Voltage to Ground Potential . ............... ............ ...........−0.4V to 4.6V DC Voltage Applied to Outputs in High-Z State[3, 4, 5] .................................−0.4V to 3.7V DC Input Voltage[3, 4, 5].................... .........−0.4V to 3.7V Output Current into Outputs (LOW) ...............................20 mA Static Discharge Voltage ........................................ >2001V (per MIL-STD-883, Method 3015) Latch-up Current ....................................................> 200 mA Operating Range Range Ambient Temperature (TA) VCC Extended −25°C to +85°C 2.7V to 3.3V Electrical Characteristics (Over the Operating Range) -55 -70 Parameter Description Test Conditions Min. Typ. [2] Max. Min. Typ. [2] Max. Unit VCC Supply Voltage 2.7 3.0 3.3 2.7 3.3 V VOH Output HIGH Voltage IOH = −0.1 mA VCC- 0.4 VCC- 0.4 V VOL Output LOW Voltage IOL = 0.1 mA 0.4 0.4 V VIH Input HIGH Voltage 0.8* VCC VCC+ 0.4 0.8* VCC VCC +0.4 V VIL Input LOW Voltage -0.4 0.4 -0.4 0.4 V IIX Input Leakage Current GND ≤VIN ≤ VCC -1 +1 -1 +1 µA IOZ Output Leakage Current GND ≤ VOUT ≤ VCC , Output Disable -1 +1 -1 +1 µA f = fMAX = 1/tRC 14 22 8 15 ICC VCC Operating Supply Current f = 1 MHz VCC = 3.3V IOUT = 0mA CMOS levels 1 5 1 5 mA ISB1 Automatic CE 1 Power-Down Current —CMOS Inputs CE 1 ≥ VCC−0.2V, CE2 ≤ 0.2V VIN ≥ VCC − 0.2V, VIN ≤ 0.2V, f = fMAX (Address and Data Only), f = 0 40 250 40 250 µA ISB2 Automatic CE 1 Power-Down Current —CMOS Inputs CE 1 ≥ VCC−0.2V, CE2 ≤ 0.2V VIN ≥ VCC − 0.2V, VIN ≤ 0.2V, f = 0, VCC = 3.3V 9 40 9 40 µA Capacitance [6] Parameter Description Test Conditions Max. Unit CIN Input Capacitance 8 pF COUT Output Capacitance TA = 25°C, f = 1 MHz VCC = VCC(typ) 8 pF Thermal Resistance [6] Parameter Description Test Conditions BGA Unit ΘJA Thermal Resistance(Junction to Ambient) 55 °C/W ΘJC Thermal Resistance (Junction to Case) Test conditions follow standard test methods and procedures for measuring thermal impedance, per EIA/ JESD51. 17 °C/W Notes: 3.VIH(MAX) = VCC + 0.5V for pulse durations less than 20 ns. 4.VIL(MIN) = –0.5V for pulse durations less than 20 ns. 5.Overshoot and undershoot specifications are characterized and are not 100% tested. 6.Tested initially and after design or process changes that may affect these parameters. |
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