ESMT

M24L16161ZA

Elite Semiconductor Memory Technology Inc.

Publication Date : Jul. 2007

Revision : 1.0

7/15

Maximum Ratings

(Above which the useful life may be impaired. For user

guide-lines, not tested.)Storage

Temperature .................................–65°C to +150°C

Ambient Temperature with

Power Applied.............................................–55°C to +125°C

Supply Voltage to

DC Voltage Applied to Outputs

Output Current into Outputs (LOW).............................20 mA

Static Discharge Voltage.......................................... > 2001V

(per MIL-STD-883, Method 3015)Latch-Up

Current....................................................> 200 mA

Operating Range

Range

Ambient

Industrial

−40°C to +85°C

2.2V to 3.6V

DC Electrical Characteristics (Over the Operating Range) [8, 9, 10]

-70

Parameter

Description

Test Conditions

Min.

Typ.[4]

Max.

Unit

Supply Voltage

2.2

3.0

3.6

V

Output HIGH

Voltage

V

Output LOW

Voltage

0.2

V

Input HIGH

Voltage

V

Input LOW Voltage

-0.3

V

Input Leakage

Current

GND

-1

+1

µA

Output Leakage

Current

GND

-1

+1

µA

CMOS levels

18

25

Supply Current

f = 1 MHz

3

5

mA

Automatic CE

Power-Down

Current

—CMOS Inputs

= 0

( OE , WE , BHE and BLE ),

55

70

µA

Automatic CE

Power-Down

Current

—CMOS Inputs

ZZ

55

70

µA

Deep Sleep

Current

BHE and BLE = HIGH

10

µA

Capacitance[11]

Parameter

Description

Test Conditions

Max.

Unit

Input Capacitance

8

pF

Notes:

10.Overshoot and undershoot specifications are characterized and are not 100% tested.

11.Tested initially and after any design or process changes that may affect these parameters..