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FDP054N10 Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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FDP054N10 Datasheet(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page FDP054N10 Rev. A www.fairchildsemi.com 4 Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation vs. Temperature vs. Temperature Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature Figure 11. Transient Thermal Response Curve -80 -40 0 40 80 120 160 200 0.8 0.9 1.0 1.1 1.2 * Notes : 1. VGS = 0V 2. ID = 10mA TJ, Junction Temperature [ o C] -80 -40 0 40 80 120 160 200 0.4 0.8 1.2 1.6 2.0 2.4 * Notes : 1. VGS = 10V 2. ID = 75A TJ, Junction Temperature [ o C] 25 50 75 100 125 150 175 0 50 100 150 Limitted by package TC, Case Temperature [ o C] 0.1 1 10 100 0.01 0.1 1 10 100 1000 10μs 100μs 1ms 10ms VDS, Drain-Source Voltage [V] Operation in This Area is Limited by R DS(on) *Notes: 1. TC = 25 o C 2. TJ = 175 o C 3. Single Pulse 200 DC 10 -5 10 -4 10 -3 10 -2 10 -1 110 0.001 0.01 0.1 1 0.01 0.1 0.2 0.05 0.02 * Notes : 1. ZθJC(t) = 0.57 o C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.5 Single pulse Rectangular Pulse Duration [sec] t1 PDM t2 |
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