FDMS6681Z datasheet(4/7 Pages) FAIRCHILD

Part #	FDMS6681Z

Description	P-Channel PowerTrench짰MOSFET -30 V, -49 A, 3.2 m��

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Manufacturer	FAIRCHILD [Fairchild Semiconductor]

Direct Link	http://www.fairchildsemi.com

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4

FDMS6681Z Rev.C4

Figure 7.

0

50

100

150

200

0

2

4

6

8

10

Qg, GATE CHARGE (nC)

ID = -22.1 A

VDD = -15 V

VDD = -20 V

VDD = -10 V

Gate Charge Characteristics

Figure 8.

0.1

1

10

600

1000

10000

20000

f = 1 MHz

VGS = 0 V

-VDS, DRAIN TO SOURCE VOLTAGE (V)

Crss

Coss

Ciss

30

Capacitance vs Drain

to Source Voltage

Figure 9. Unclamped Inductive

SwitchingCapability

0.001

0.01

0.1

1

10

100

1

50

TJ = 100 oC

TJ = 25 oC

TJ = 125 oC

t

AV, TIME IN AVALANCHE (ms)

100

Figure 10.

0

5

10

15

20

25

30

10

-9

10

-8

10

-7

10

-6

10

-5

10

-4

VGS = 0 V

TJ = 25 oC

TJ = 150 oC

VGS, GATE TO SOURCE VOLTAGE (V)

Igss vs Vgss

Figure 11.

0.01

0.1

1

10

100

0.01

0.1

1

10

100

10 s

1 s

DC

100 ms

10 ms

1 ms

-VDS, DRAIN to SOURCE VOLTAGE (V)

THIS AREA IS

LIMITED BY r

DS(on)

SINGLE PULSE

TJ = MAX RATED

R JA = 125

oC/W

TA = 25

oC

Forward Bias Safe

Operating Area

Figure 12.

0.001

0.01

0.1

1

10

100

1000

0.1

1

10

100

1000

SINGLE PULSE

R

JA = 125

oC/W

TA = 25

oC

V

GS = -10 V

t, PULSE WIDTH (sec)

Single Pulse Maximum

Power Dissipation

Typical Characteristics T

J = 25 °C unless otherwise noted

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