July 2009

©2009 Fairchild Semiconductor Corporation

FDMC86102 Rev.C

www.fairchildsemi.com

1

FDMC86102

100 V, 20 A, 24 m

Ω

Features

Low Profile - 1 mm max in Power 33

100% UIL Tested

RoHS Compliant

General Description

This

N-Channel

MOSFET

is

produced using Fairchild

been especially tailored to minimize the on-state resistance and

yet maintain superior switching performance.

Application

DC - DC Conversion

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

Drain to Source Voltage

100

V

Gate to Source Voltage

±20

V

Drain Current -Continuous (Package limited)

20

A

-Continuous (Silicon limited)

29

-Continuous

(Note 1a)

7

-Pulsed

30

Single Pulse Avalanche Energy

(Note 3)

72

mJ

Power Dissipation

41

W

Power Dissipation

(Note 1a)

2.3

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Resistance, Junction to Case

3

°C/W

Thermal Resistance, Junction to Ambient

(Note 1a)

53

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDMC86102

FDMC86102

Power 33

13’’

12 mm

3000 units

G

S

S

S

D

D

D

D

5

6

7

8

3

2

1

4

Top

Power 33

Bottom

D

D

D

D

S

S

S

G

Pin 1