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STN4972S8RG Datasheet(PDF) 2 Page - Stanson Technology |
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STN4972S8RG Datasheet(HTML) 2 Page - Stanson Technology |
2 / 7 page STN4972 Dual N Channel Enhancement Mode MOSFET 8.5A STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com Copyright © 2007, Stanson Corp. STN4972 2008. V1 ABSOULTE MAXIMUM RATINGS (Ta = 25℃ Unless otherwise noted ) Parameter Symbol Typical Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ± 20 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ ID 8.5 7.5 A Pulsed Drain Current IDM 25 A Continuous Source Current (Diode Conduction) IS 2.3 A Power Dissipation TA=25℃ TA=70℃ PD 2.5 1.6 W Operation Junction Temperature TJ -55/150 ℃ Storgae Temperature Range TSTG -55/150 ℃ Thermal Resistance-Junction to Ambient RθJA 80 ℃ /W |
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