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FDB120N10 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDB120N10 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page tm June 2009 ©2009 Fairchild Semiconductor Corporation FDB120N10 Rev. A www.fairchildsemi.com 1 FDB120N10 N-Channel PowerTrench® MOSFET 100V, 74A, 12m Ω Features •RDS(on) = 9.7mΩ ( Typ.)@ VGS = 10V, ID = 74A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semicon- ductor’s advanced PowerTrench process that has been espe- cially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application • DC to DC Converters / Synchronous Rectification G S D D2-PAK FDB Series D G S MOSFET Maximum Ratings T C = 25 oC unless otherwise noted Thermal Characteristics Symbol Parameter Ratings Units VDSS Drain to Source Voltage 100 V VGSS Gate to Source Voltage ±20 V ID Drain Current - Continuous (TC = 25 oC) 74 A - Continuous (TC = 100 oC) 52 IDM Drain Current - Pulsed (Note 1) 296 A EAS Single Pulsed Avalanche Energy (Note 2) 198 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.8 V/ns PD Power Dissipation (TC = 25 oC) 170 W - Derate above 25oC1.14 W/oC TJ, TSTG Operating and Storage Temperature Range -55 to +175 oC TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds 300 oC Symbol Parameter Ratings Units RθJC Thermal Resistance, Junction to Case 0.88 oC/W RθJA Thermal Resistance, Junction to Ambient 62.5 |
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