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2SB023040MLJY Datasheet(PDF) 1 Page - Silan Microelectronics Joint-stock |
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2SB023040MLJY Datasheet(HTML) 1 Page - Silan Microelectronics Joint-stock |
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1 / 1 page  2SB023040MLJY HANGZHOU SILAN MICROELECTRONICS CO.,LTD REV:1.0 2007.09.18 Http: www.silan.com.cn Page 1 of 1 2SB023040MLJY SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB023040MLJY is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø Guard ring construction for transient protection; Ø High ESD capability; Ø High surge capability; Ø Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits; Ø Chip Size:230 µm X 230µm; Ø Chip Thickness: 155±20 µm Chip Topography and Dimensions La: Chip Size: 230 µm; Lb: Pad Size: 140 µm; ORDERING SPECIFICATIONS Product Name Specification 2SB023040MLJY For Au and AlSi wire bonding package ABSOLUTE MAXIMUM RATINGS Parameters Symbol Ratings Unit Maximum Repetitive Peak Reverse Voltage VRRM 40 V Average Forward Rectified Current IFAV 30 mA Peak Forward Surge Current@8.3ms IFSM 200 mA Maximum Operation Junction Temperature TJ 125 °C Storage Temperature Range TSTG -40~125 °C ELECTRICAL CHARACTERISTICS (Tamb=25 °C) Parameters Symbol Test Conditions Min. Max. Unit Reverse Voltage VBR IR=0.1m A 40 -- V Forward Voltage VF IF=1mA -- 0.37 V Reverse Current IR VR=30V -- 0.5 µA |
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