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MA40215 Datasheet(PDF) 4 Page - M/A-COM Technology Solutions, Inc. |
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MA40215 Datasheet(HTML) 4 Page - M/A-COM Technology Solutions, Inc. |
4 / 5 page Schottky Detector Diodes Rev. V3 Schottky Detector Diodes • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. N Type Silicon Schottky Chip Detector Diodes These low barrier N type chip detector diodes are suitable for use in microstrip applications. They feature sensitivity, and low l/f noise. These diodes are listed by increasing frequency. Model Number Case Style Test Frequency (GHz) Nominal 1,5 TSS (dBm) Minimum Reverse Voltage VR (Volts) Nominal 3 Forward Voltage (Volts) Nominal 4 Total Capacitance (pF) MA40220 135 10.0 -52 2.0 0.3 0.12 MA40222 135 16.0 -52 2.0 0.3 0.09 P Type Silicon Schottky Chip Detector Diodes These low barrier P type chip detector diodes are suitable for use in microstrip or stripline circuits. These diodes are listed by increasing test fre- quency. Model Number Case Style Test Frequency (GHz) Nominal 1,5 TSS (dBm) Minimum Reverse Voltage VR (Volts) Nominal 3 Forward Voltage (Volts) Nominal 4 Total Capacitance (pF) MA40270 135A 10.0 -52 4.0 0.4 0.12 MA40272 135A 16.0 -52 4.0 0.4 0.09 Notes: 1. The video amplifier bandwidth is 1 MHz and the noise figure is 3 dB. Impedance is 10 k Ohms and DC Bias is +20 µA. Wafers are evalu- ated on a sample basis for TSS. 2. Voltage rating is measured at 10 µA reverse bias current. 3. Forward voltage is measured at a forward current of 1 mA. 4. Capacitance is measured at 0 V and 1 MHz. 5. RF power = -30 dBm. The DC forward bias is +20 µA. Measured at the indicated test frequency and at -30 dBm RF power with RL = 10 k Ohms and DC forward bias +20 µA |
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