1

Schottky Diodes: Anti-Parallel Pair

M/A-COM Products

Rev. V3

MA4E2508 Series

ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for

development. Performance is based on target specifications, simulated results, and/or prototype

measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-

ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has

been fixed. Engineering samples and/or test data may be available. Commitment to produce in

volume is not guaranteed.

•

North America Tel: 800.366.2266 / Fax: 978.366.2266

•

Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300

•

Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298

Visit www.macom.com for additional data sheets and product information.

MA-COM Technical Solutions and its affiliates reserve the right to make changes to the

product(s) or information contained herein without notice.

Features

• Extremely Low Parasitic Capitance & Induc-

tance

• Surface Mountable in Microwave Circuits, No

Wirebonds Required

• Rugged HMIC Construction with polyimide

Scratch Protection

• Reliable, Multilayer Metalization with a Diffusion

Barrier, 100 % Stabilization Bake (300°C, 16

hours)

• Lower Susceptibility to ESD Damage

Description

The MA4E2508 SURMOUNT

Series are Silicon Low, Medium, & High Barrier

Schottky Devices fabricated with the patented Het-

erolithic Microwave Integrated Circuit (HMIC) proc-

ess.

HMIC circuits consist of Silicon pedestals

which form diodes or via conductors embedded in

a glass dielectric, which acts as the low dispersion,

low loss, microstrip transmission medium. The

combination of silicon and glass allows HMIC de-

vices to have excellent loss and power dissipation

characteristics in a low profile, reliable device.

The Surmount Schottky devices are excellent

choices for circuits requiring the small parasitics of

a beam lead device coupled with the superior me-

chanical performance of a chip. The SurMount

structure employs very low resistance silicon vias

to connect the Schottky contacts to the metalized

mounting pads on the bottom surface of the chip.

These devices are reliable, repeatable, and a lower

cost performance solution to conventional devices.

They have lower susceptibility to electrostatic dis-

charge than conventional beam lead Schottky di-

odes.

The multi-layer metalization employed in the fabri-

cation of the Surmount Schottky junctions includes

a platinum diffusion barrier, which permits all de-

vices to be subjected to a 16-hour non-operating

stabilization bake at 300°C.

The “0502” outline allows for Surface Mount place-

ment and multi- functional polarity orientations.

Case Style 1112

Case Style 1112

A

A

B

C

D

E

D

DIM

INCHES

MIN.

MAX.

MIN.

MAX.

A

0.0445

0.0465

1.130

1.180

B

0.0169

0.0189

0.430

0.480

C

0.0040

0.0080

0.102

0.203

D Sq.

0.0128

0.0148

0.325

0.375

E

0.0128

0.0148

0.325

0.375

MILLIMETERS

Equivalent Circuit