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MA4E2502L Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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MA4E2502L Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 5 page 1 SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes M/A-COM Products Rev. V7 MA4E2502 Series ADVANCED: Data Sheets contain information regarding a product MA-COM Technical Solutions is considering for development. Performance is based on target specifications, simulated results, and/ or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product MA-COM Technical Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commit- ment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. MA-COM Technical Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Features • Extremely Low Parasitic Capitance and Induc- tance • Surface Mountable in Microwavable Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide Scratch Protection • Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake (300°C, 16 hours) • Lower Susceptibility to ESD Damage Description and Applications The MA4E2502 SURMOUNT TM Series Diodes are Silicon Low, Medium, and High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, micro- strip transmission medium. The combination of silicon and glass allows HMIC devices to have ex- cellent loss and power dissipation characteristics in a low profile, reliable device. The Surmount Schottky devices are excellent choices for circuits requiring the small parasitics of a beam lead device coupled with the superior me- chanical performance of a chip. The Surmount structure employs very low resistance silicon vias to connect the Schottky contacts to the metalized mounting pads on the bottom surface of the chip. These devices are reliable, repeatable, and a lower cost performance solution to conventional devices. They have lower susceptibility to electrostatic dis- charge than conventional beam lead Schottky di- odes. The multilayer metallization employed in the fabri- cation of the Surmount Schottky junctions includes a platinum diffusion barrier, which permits all de- vices to be subjected to a 16-hour non-operating stabilization bake at 300°C. The “0502” outline allows for Surface Mount place- ment and multi-functional polarity orientations. The MA4E2502 Family of Surmount Schottky di- odes are recommended for use in microwave cir- cuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors, and limiters. The HMIC construction facilitates the direct replacement of more fragile beam lead diodes with the corresponding Sur- mount diode, which can be connected to a hard or soft substrate circuit with solder. Case Style 1246 DIM INCHES MIN. MAX. MIN. MAX. A 0.0445 0.0465 1.130 1.180 B 0.0169 0.0189 0.430 0.480 C 0.0040 0.0080 0.102 0.203 D Sq. 0.0128 0.0148 0.325 0.375 E 0.0128 0.0148 0.325 0.375 MILLIMETERS |
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