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MASW-002100-11910W Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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MASW-002100-11910W Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 9 page • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 1 HMIC™ Silicon PIN Diode Switches RoHs Compliant Rev. V6 MASW-001100-1190 MASW-002100-1191 MASW-003100-1192 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Features ♦ Broad Bandwidth ♦ Specified from 50MHz to 20GHz ♦ Usable from 50MHz to 26.5GHz ♦ Lower Insertion Loss / Higher Isolation than pHempt ♦ Rugged ♦ Fully Monolithic, ♦ Glass Encapsulated Construction ♦ Up to +33dBm C.W. Power Handling Description The MASW-001100-1190, MASW-002100-1191 and MASW-003100-1192 are broadband monolithic switches using series and shunt connected silicon PIN diodes. They are designed for use as 2W, high performance switches in applications up to 26.5GHz. They provide performance levels superior to those realized by hybrid MIC designs incorporating beamlead and PIN chip diodes that require chip and wire assembly. These switches are fabricated using M/A-COM’s patented HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through low millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon leads, while gold backside metallization allows for manual or automatic chip bonding via 80/20, AuSn solder or conductive Ag epoxy. Parameter Absolute Maximum Operating Temperature -65oC to +125oC Storage Temperature -65oC to +150oC Junction Temperature +175oC Applied Reverse Voltage | - 50V | RF C.W. Incident Power +33dBm C.W. Bias Current +25°C ±20mA MASW-001100-1190 Max operating Conditions for a Combination of RF Power, D.C. Bias and Temperature: +33dBm CW @ 15mA (per diode) @+85°C MASW-002100-1191 MASW-003100-1192 |
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