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Visit www.macomtech.com for additional data sheets and product information.

M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make

changes to the product(s) or information contained herein without notice.

1

HMIC™ Silicon PIN Diode Switches

RoHs Compliant

Rev. V6

MASW-001100-1190

MASW-002100-1191

MASW-003100-1192

ADVANCED:

Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY:

Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

Features

♦ Broad Bandwidth

♦ Specified from 50MHz to 20GHz

♦ Usable from 50MHz to 26.5GHz

♦ Lower Insertion Loss / Higher Isolation

than pHempt

♦ Rugged

♦ Fully Monolithic,

♦ Glass Encapsulated Construction

♦ Up to +33dBm C.W. Power Handling

Description

The MASW-001100-1190, MASW-002100-1191 and

MASW-003100-1192 are broadband monolithic

switches using series and shunt connected silicon

PIN diodes. They are designed for use as 2W, high

performance

switches

in

applications

up

to

26.5GHz. They provide performance levels superior

to

those

realized

by

hybrid

MIC

designs

incorporating beamlead and PIN chip diodes that

require chip and wire assembly.

These switches are fabricated using M/A-COM’s

Circuit) process, US Patent 5,268,310. This process

allows the incorporation of silicon pedestals that

form series and shunt diodes or vias by imbedding

them in low loss, low dispersion glass. By using

small spacing between elements, this combination

of silicon and glass gives HMIC devices low loss

and high isolation performance through low

millimeter frequencies.

Large bond pads facilitate the use of low inductance

ribbon leads, while gold backside metallization

allows for manual or automatic chip bonding via

80/20, AuSn solder or conductive Ag epoxy.

Parameter

Absolute Maximum

Operating Temperature

Storage Temperature

Junction Temperature

Applied Reverse Voltage

| - 50V |

RF C.W. Incident Power

+33dBm C.W.

Bias Current +25°C

±20mA

MASW-001100-1190

Max operating Conditions for a Combination of

RF Power, D.C. Bias and Temperature:

+33dBm CW @ 15mA (per diode) @+85°C

MASW-002100-1191

MASW-003100-1192