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MASW-000555-13570G Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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MASW-000555-13570G Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 7 page • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 1 SP5T AlGaAs PIN Diode Switch RoHS Compliant Rev. V3 MA4AGSW5 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. FEATURES ♦ Ultra Broad Bandwidth: 50 MHz to 50 GHz ♦ Functional Bandwidth : 50 MHz to 70 GHz ♦ 1.7dB Insertion Loss at 50 GHZ ♦ 35 dB Isolation at 50 GHz ♦ Low Current consumption. • -10mA for low loss state •+10mA for Isolation state ♦ M/A-COM’s unique AlGaAs hetero-junction anode technology. ♦ Silicon Nitride Passivation ♦ Polymer Scratch protection DESCRIPTION M/A-COM’s MA4AGSW5 is an Aluminum-Gallium- Arsenide, single pole, five throw (SP5T), PIN diode switch. The switch features enhanced AlGaAs anodes which are formed using M/A-COM’s patented hetero- junction technology. AlGaAs technology produces a switch with less loss than a device fabricated using conventional GaAs processes. As much as a 0.3 dB reduction in insertion loss can be realized at 50 GHz. This device is fabricated on an OMCVD epitaxial wafer using a process designed for high device uniformity and extremely low parasitics. The diodes within the chip exhibit low series resistance, low capacitance, and fast switching speed. They are fully passivated with silicon nitride and have an additional polymer layer for scratch protection. The protective coating prevents damage during handling and assembly to the diode junction and the chip anode air-bridges. Off chip bias circuitry is required. APPLICATIONS The high electron mobility of AlGaAs and the low capacitance of the PIN diodes used makes this switch ideal for fast response, high frequency, multi-throw switch designs where the series capacitance in each off-arm will load the input. AlGaAs PIN diode switches are an ideal choice for switching arrays in radar systems, radiometers, test equipment and other multi- assembly components. Yellow areas indicate bond pads Absolute Maximum Ratings @ TAMB = +25°C Parameter Maximum Rating Operating Temperature -55°C to +125°C Storage Temperature -55°C to +150°C Incident C.W. RF Power +23dBm C.W. Breakdown Voltage 25V Bias Current ± 25mA Assembly Temperature +300°C < 10 sec Junction Temperature +175°C Maximum combined operating conditions for RF Power, D.C. bias, and temperature: +23 dBm C.W. @ 10 mA (per diode) @ +85°C. |
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