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MASW-000555-13570G Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc.

Part # MASW-000555-13570G
Description  SP5T AlGaAs PIN Diode Switch RoHS Compliant
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Manufacturer  MA-COM [M/A-COM Technology Solutions, Inc.]
Direct Link  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

MASW-000555-13570G Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc.

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• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
1
SP5T AlGaAs PIN Diode Switch
RoHS Compliant
Rev. V3
MA4AGSW5
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
FEATURES
Ultra Broad Bandwidth: 50 MHz to 50 GHz
Functional Bandwidth : 50 MHz to 70 GHz
1.7dB Insertion Loss at 50 GHZ
35 dB Isolation at 50 GHz
Low Current consumption.
-10mA for low loss state
+10mA for Isolation state
M/A-COM’s unique AlGaAs hetero-junction
anode technology.
Silicon Nitride Passivation
Polymer Scratch protection
DESCRIPTION
M/A-COM’s MA4AGSW5 is an Aluminum-Gallium-
Arsenide, single pole, five throw (SP5T), PIN diode
switch. The switch features enhanced AlGaAs anodes
which are formed using M/A-COM’s patented hetero-
junction technology. AlGaAs technology produces a
switch with less loss than a device fabricated using
conventional GaAs processes. As much as a 0.3 dB
reduction in insertion loss can be realized at 50 GHz.
This device is fabricated on an OMCVD epitaxial wafer
using a process designed for high device uniformity
and extremely low parasitics. The diodes within the
chip exhibit low series resistance, low capacitance,
and fast switching speed. They are fully passivated
with silicon nitride and have an additional polymer
layer for scratch protection. The protective coating
prevents damage during handling and assembly to the
diode junction and the chip anode air-bridges. Off chip
bias circuitry is required.
APPLICATIONS
The high electron mobility of AlGaAs and the low
capacitance of the PIN diodes used makes this switch
ideal for fast response, high frequency, multi-throw
switch designs where the series capacitance in each
off-arm will load the input. AlGaAs PIN diode switches
are an ideal choice for switching arrays in radar
systems, radiometers, test equipment and other multi-
assembly components.
Yellow areas indicate bond pads
Absolute Maximum Ratings @ TAMB = +25°C
Parameter
Maximum Rating
Operating Temperature
-55°C to +125°C
Storage Temperature
-55°C to +150°C
Incident C.W. RF Power
+23dBm C.W.
Breakdown Voltage
25V
Bias Current
± 25mA
Assembly Temperature
+300°C < 10 sec
Junction Temperature
+175°C
Maximum combined operating conditions for RF Power, D.C.
bias, and temperature: +23 dBm C.W. @ 10 mA (per diode) @
+85°C.


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