RT3K66M datasheet(3/4 Pages) ISAHAYA

Part #	RT3K66M

Description	Composite Transistor For high speed switching Silicon N-channel MOSFET

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Manufacturer	ISAHAYA [Isahaya Electronics Corporation]

Direct Link	http://www.idc-com.co.jp

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TYPICAL CHARACTERISTICS

ISAHAYA ELECTRONICS CORPORATION

ID -VDS

0

20

40

60

80

100

05

10

Drain-Source voltage VDS (V)

Ta=25℃

1.8V

1.9V

2.0V

2.1V

VGS=2.2V

2.3V

2.4V

2.5V

2.6V

2.7V

ID -VDS(Low voltage region)

0

0.2

0.4

0.6

0.8

1

0

0.1

0.2

0.3

0.4

0.5

Drain-Source voltage VDS (V)

Ta=25℃

1.5V

VGS=1.6V

1.65V

1.7V

1.85V

1.9V

1.75V

1.8V

ID -VGS

1

10

100

1000

01

2

345

Gate-Source voltage VGS (V)

Ta=25℃

VDS=10V

IDR -VDS

1

10

100

-0

-0.5

-1

-1.5

-2

Drain-Source voltage VDS (V)

Ta=25℃

VGS=0V

|Yfs| - ID

1

10

100

1000

1

10

100

1000

Drain current ID (mA)

Ta=25℃

VDS=10V

RDS(on) - ID

0

1

2

3

4

5

0

50

100

150

200

Drain current　ID (mA)

Ta=25℃

10V

VGS=4V

C - VDS

0.1

1

10

100

0.1

1

10

100

Drain-Source voltage VDS (V)

Coss

Ciss

Ta=25℃

VGS=0V

t - ID

1

10

100

1000

10000

0.1

1

10

100

Drain current ID (mA)

Ta=25℃

ton

toff

tr

tf

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RT3K66M Datasheet(PDF) 3 Page - Isahaya Electronics Corporation

RT3K66M Datasheet(HTML) 3 Page - Isahaya Electronics Corporation

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