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INJ0011AM1 Datasheet(PDF) 2 Page - Isahaya Electronics Corporation |
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INJ0011AM1 Datasheet(HTML) 2 Page - Isahaya Electronics Corporation |
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2 / 4 page  ＩＮJ0011AＸ SERIES High speed switching Silicon P-channel MOSFET MAXIMUM RATING（Ｔａ＝２５℃） RATING SYMBOL PARAMETER INJ0001AT2 INJ0001AU1 INJ0001AM1 INJ0001AC1 UNIT Ｖ DSS Drain-source voltage -50 V Ｖ GSS Gate-source voltage ±20 V Ｉ D Drain current -100 mA Ｐ Ｄ Total power dissipation （Ta=25℃） 125（※） 150 200 mW Ｔch Channel temperature +125 +150 ℃ Ｔｓｔｇ Range of Storage temperature -55～+125 -55～+150 ℃ ELECTRICAL CHARACTERISTICS（Ｔａ＝２５℃） ※package mounted on 9mm×19mm×1mm glass-epoxy substrate. LIMIT SYMBOL PARAMETER TEST CONDITION MIN TYP MAX UNIT V(BR)DSS Drain-source breakdown voltage I D=-100μA, V GS=0V -50 - - V IGSS Gate-source leak current V GS=±20V, VDS=0V - - ±10 μA IDSS Zero gate voltage drain current V DS=-50V ,VGS=0V - - -1.0 μA Vth Gate threshold voltage I D=-250μA, V DS= V GS -1.0 - -2.0 V | Yfs | Forward transfer admittance V DS=-10V, I D=-100mA - 145 - mS I D=-100mA, V GS=-4.0V - 7.0 - RDS(ON) Static drain-source on-state resistance I D=-100mA, V GS=-10V - 4.8 - Ω Ciss Input capacitance V DS=-10V, V GS=0V,f=1MHz - 25 - pF Coss Output capacitance V DS=-10V, V GS=0V,f=1MHz - 6.0 - pF tON - 35 - tOFF Switching time V DD=-5V , I D=-10mA V GS=0～-5V - 90 - ns Switching time test condition ISAHAYA ELECTRONICS CORPORATION VDD=-5V D.U.≦1% Common source Ta=25℃ VDS(ON） -5V 0V 90% 10% VDD 90% 10% ton toff tr tf 0 -5V 10μs test circuit input waveform output waveform IN 50Ω OUT RL VDD VDD=-5V D.U.≦1% Common source Ta=25℃ VDS(ON） -5V 0V 90% 10% VDD 90% 10% ton toff tr tf VDS(ON） -5V 0V 90% 10% VDD 90% 10% ton toff tr tf -5V 0V 90% 10% VDD 90% 10% ton toff tr tf 0 -5V 10μs test circuit input waveform output waveform IN 50Ω OUT RL VDD IN 50Ω IN 50Ω OUT RL VDD |
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