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MASWSS0204 Datasheet(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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MASWSS0204 Datasheet(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
1 / 3 page GaAs SPDT 2.7 V High Power Switch DC - 3.0 GHz Rev. V3 MASWSS0204 1 • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 • India Tel: +91.80.43537383 • China Tel: +86.21.2407.1588 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. Features • Low Voltage Operation: 2.7 V • High IP3: +56 dBm • Low Insertion Loss: 0.30 dB at 1 GHz • High Isolation: 25 dB at 1 GHz • 0.5 micron GaAs PHEMT Process • Lead-Free SC70 Package • Halogen-Free “Green” Mold Compound • 260°C Reflow Compatible • RoHS* Compliant Version of MASWSS0117 Description The MASWSS0204 is a GaAs pHEMT MMIC single pole double throw (SPDT) high power switch in a low cost SC70 six lead package. The MASWSS0204 is ideally suited for applications where high power, low control voltage, low insertion loss, high isolation, small size and low cost are required. Typical applications are for CDMA handset systems that connect separate transceiver and/or GPS functions to a common antenna, as well as other related handset and general purpose applications. The MASWSS0204 can be used in all systems operating up to 3 GHz requiring high power at low control voltage. The MASWSS0204 is fabricated using a 0.5 micron gate length GaAs pHEMT process. The process features full passivation for performance and reliability. Functional Block Diagram Pin Configuration Pin No. Pin Name Description 1 V2 Vcontrol 2 2 RFC RF Common 3 V1 Vcontrol 1 4 RF1 RF Port 1 5 GND RF Ground 6 RF2 RF Port 2 Part Number Package MASWSS0204 Bulk Packaging MASWSS0204TR-3000 3000 piece reel MASWSS0204SMB Sample Test Board MASWSS0204 orientation in tape * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 1. Reference Application Note M513 for reel size information. 2. All sample boards include 5 loose parts. Ordering Information 1,2 Note: Device supplied on tape and reel is the reverse orientation of that shown in Application Note M513. |
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