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MA4E2054C-1146T Datasheet(PDF) 3 Page - M/A-COM Technology Solutions, Inc. |
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MA4E2054C-1146T Datasheet(HTML) 3 Page - M/A-COM Technology Solutions, Inc. |
3 / 9 page 3 Surface Mount Low Barrier Schottky Diode M/A-COM Products Rev. V8 MA4E2054 Series ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. • North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400 • India Tel: +91.80.4155721 • China Tel: +86.21.2407.1588 Visit www.macomtech.com for additional data sheets and product information. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Maximum Ratings 1 1. At 125 °C case temperature. Derate linearly to zero watts at 125 °C case temperature. Parameter Maximum Ratings Operating Temperature -65 to +125 Storage Temperature -65 to +125 Incident RF Power (CW) 75* Reverse Voltage @ 25 °C 3 Forward Current 20 Soldering Temperature (Standard Part #) +235 for 5 sec. Unit °C °C mW V mA °C Soldering Temperature (Lead Free Part #) °C +260 for 5 sec. Electrostatic Discharge ( ESD ) Classification 2 - Class 0 Electrical Specifications @ +25 °C Parameter Condition Symbol Specification Breakdown Voltage IR = 10 μA VB 3.0 V min. Reverse Leakage Current VR = 1 V IR 100 nA max. Reverse Leakage Current VR = 3 V IR 500 nA max. Total Capacitance VR = 0 V f = 1 MHz CT 0.30 pF max. Dynamic Resistance 3 IF = 10 mA RD 17 Ohms max. Forward Voltage IF = 1 mA VF 250 mV min. 350 mV min. Forward Voltage Difference 2 IF = 1 mA VF 20 mV max. 2. Applies to MA4E2054B, MA4E2054D and MA4E2054E configurations. 3. RD = RS + RJ where RJ = 26 IF (in mA) Typical RF Performance @ +25 °C in Chip Form, Mounted on a Microstrip Fixture Parameter Conditions Typical Value Mixer Noise Figure 4 f = 9.375 GHz 5.7 dB (SSB) IF Impedance IF = 30 MHz 200 ohms Tangential Signal Sensitivity 5 IF = 20 mA BW = 2 MHz -55 dBm Detector Output, Voltage at -30 dBm 5 RL = 100K Ohms IF = 20 μA 20 mV Detector Output, Voltage at -30 dBm 5 RL = 1M Ohm 20 mV 4. Fixture tuned to 9.375 GHz. 5. Fixture tuned to 2.5 GHz. See figures on page 3 for untuned fixture performance. 2. Human Body Model |
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