ESMT

M12L64164A

Operation Temperature Condition -40°C~85°C

Elite Semiconductor Memory Technology Inc.

Publication Date: Dec. 2007

Revision: 1.2

9/45

MODE REGISTER FIELD TABLE TO PROGRAM MODES

Register Programmed with MRS

Address

A13~A12

A11~A10/AP

A9

A8

A7

A6

A5

A4

A3

A2

A1

A0

Function

RFU

RFU

W.B.L

TM

CAS Latency

BT

Burst Length

Test Mode

CAS Latency

Burst Type

Burst Length

A8

A7

Type

A6

A5

A4

Latency

A3

Type

A2

A1

A0

BT = 0

BT = 1

0

0

Mode Register Set

0

0

0

Reserved

0

Sequential

0

0

0

1

1

0

1

Reserved

0

0

1

Reserved

1

Interleave

0

0

1

2

2

1

0

Reserved

0

1

0

2

0

1

0

4

4

1

1

Reserved

0

1

1

3

0

1

1

8

8

Write Burst Length

1

0

0

Reserved

1

0

0

Reserved Reserved

A9

Length

1

0

1

Reserved

1

0

1

Reserved Reserved

0

Burst

1

1

0

Reserved

1

1

0

Reserved Reserved

1

Single Bit

1

1

1

Reserved

1

1

1

Full Page Reserved

Full Page Length : 256

POWER UP SEQUENCE

1.Apply power and start clock, Attempt to maintain CKE = ”H”, DQM = ”H” and the other pin are NOP condition at the inputs.

2. Maintain stable power , stable clock and NOP input condition for a minimum of 200us.

3. Issue precharge commands for all banks of the devices.

4. Issue 2 or more auto-refresh commands.

5. Issue mode register set command to initialize the mode register.

cf.) Sequence of 4 & 5 is regardless of the order.

The device is now ready for normal operation.

Note :

1. RFU(Reserved for future use) should stay “0” during MRS cycle.

2. If A9 is high during MRS cycle, “Burst Read Single Bit Write” function will be enabled.

3. The full column burst (256 bit) is available only at sequential mode of burst type.