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M12L32321A-7BG Datasheet(PDF) 7 Page - Elite Semiconductor Memory Technology Inc.

Part # M12L32321A-7BG
Description  512K x 32Bit x 2Banks Synchronous DRAM
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Manufacturer  ESMT [Elite Semiconductor Memory Technology Inc.]
Direct Link  http://www.esmt.com.tw/index.asp
Logo ESMT - Elite Semiconductor Memory Technology Inc.

M12L32321A-7BG Datasheet(HTML) 7 Page - Elite Semiconductor Memory Technology Inc.

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ESMT
M12L32321A
Elite Semiconductor Memory Technology Inc.
Publication Date : Oct. 2008
Revision : 1.1
7/28
MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with MRS
Address
BA
A11~A10/AP
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
Function
RFU
RFU
W.B.L
TM
CAS Latency
BT
Burst Length
Test Mode
CAS Latency
Burst Type
Burst Length
A8
A7
Type
A6
A5
A4
Latency
A3
Type
A2
A1
A0
BT = 0
BT = 1
0
0
Mode Register Set
0
0
0
Reserved
0
Sequential
0
0
0
1
1
0
1
Reserved
0
0
1
Reserved
1
Interleave
0
0
1
2
2
1
0
Reserved
0
1
0
2
0
1
0
4
4
1
1
Reserved
0
1
1
3
0
1
1
8
8
Write Burst Length
1
0
0
Reserved
1
0
0
Reserved Reserved
A9
Length
1
0
1
Reserved
1
0
1
Reserved Reserved
0
Burst
1
1
0
Reserved
1
1
0
Reserved Reserved
1
Single Bit
1
1
1
Reserved
1
1
1
Full Page Reserved
Full Page Length : 256
Note :
1. RFU(Reserved for future use) should stay “0” during MRS cycle.
2. If A9 is high during MRS cycle, “Burst Read Single Bit Write” function will be enabled.
3. The full column burst (256 bit) is available only at sequential mode of burst type.


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