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M12L16161A-7BIG Datasheet(PDF) 4 Page - Elite Semiconductor Memory Technology Inc. |
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M12L16161A-7BIG Datasheet(HTML) 4 Page - Elite Semiconductor Memory Technology Inc. |
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4 / 29 page  ESMT M12L16161A Operation temperature condition -40℃~85℃ Elite Semiconductor Memory Technology Inc. Publication Date : May. 2007 Revision : 1.1 4/29 DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, TA = -40 to 85 C ° VIH(min)/VIL(max)=2.0V/0.8V) Version Parameter Symbol Test Condition CAS Latency -5 -7 Unit Note Operating Current (One Bank Active) ICC1 Burst Length = 1 tRC ≥ tRC (min), tCC ≥ tCC (min), IOL= 0mA 130 100 mA 1 ICC2P CKE ≤ VIL(max), tCC =15ns 2 mA Precharge Standby Current in power-down mode ICC2PS CKE ≤ VIL(max), CLK ≤ VIL(max), tCC = ∞ 2 ICC2N CKE ≥ VIH(min), CS ≥ VIH(min), tCC =15ns Input signals are changed one time during 30ns 25 mA Precharge Standby Current in non power-down mode ICC2NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable 10 mA ICC3P CKE ≤ VIL(max), tCC =15ns 10 Active Standby Current in power-down mode ICC3PS CKE ≤ VIL(max), CLK ≤ VIL(max), tCC = ∞ 10 mA ICC3N CKE ≥ VIH(min), CS ≥ VIH(min), tCC=15ns Input signals are changed one time during 30ns 25 mA Active Standby Current in non power-down mode (One Bank Active) ICC3NS CKE ≥ VIH (min), CLK ≤ VIL(max), tCC= ∞ Input signals are stable 10 mA 3 150 120 mA 1 Operating Current (Burst Mode) ICC4 IOL= 0Ma, Page Burst All Band Activated, tCCD = tCCD (min) 2 150 120 Refresh Current ICC5 tRC ≥ tRC(min) 150 120 mA 2 Self Refresh Current ICC6 CKE ≤ 0.2V 1 mA Note: 1.Measured with outputs open. Addresses are changed only one time during tCC(min). 2.Refresh period is 32ms. Addresses are changed only one time during tCC(min). |
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