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F25S04PA-100HG Datasheet(PDF) 1 Page - Elite Semiconductor Memory Technology Inc. |
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F25S04PA-100HG Datasheet(HTML) 1 Page - Elite Semiconductor Memory Technology Inc. |
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1 / 34 page  ESMT (Preliminary) F25S04PA Elite Semiconductor Memory Technology Inc. Publication Date: May 2009 Revision: 0.2 1/34 Flash 2.5V Only 4 Mbit Serial Flash Memory with Dual Output FEATURES Single supply voltage 2.3~3.3V Standard, Dual SPI Speed - Read max frequency: 33MHz - Fast Read max frequency: 50MHz; 86MHz; 100MHz - Fast Read Dual max frequency: 50MHz / 86MHz/ 100MHz (100MHz / 172MHz/ 200MHz equivalent Dual SPI) Low power consumption - Active current: 25 mA - Standby current: 5 μ A - Deep Power Down current: 3 μ A Reliability - 100,000 typical program/erase cycles - 20 years Data Retention Program - Byte programming time: 7 μ s (typical) - Page programming time: 0.8 ms (typical) Erase - Chip erase time 3 sec (typical) - Block erase time 0.4 sec (typical) - Sector erase time 40 ms (typical) Page Programming - 256 byte per programmable page SPI Serial Interface - SPI Compatible: Mode 0 and Mode 3 End of program or erase detection Write Protect ( WP ) Hold Pin ( HOLD ) All Pb-free products are RoHS-Compliant ORDERING INFORMATION Product ID Speed Package COMMENTS F25S04PA –50PG 50MHz 8-lead SOIC 150 mil Pb-free F25S04PA –86PG 86MHz 8-lead SOIC 150 mil Pb-free F25S04PA –100PG 100MHz 8-lead SOIC 150 mil Pb-free F25S04PA –50PAG 50MHz 8-lead SOIC 200 mil Pb-free F25S04PA –86PAG 86MHz 8-lead SOIC 200 mil Pb-free F25S04PA –100PAG 100MHz 8-lead SOIC 200 mil Pb-free F25S04PA –50DG 50MHz 8-lead PDIP 300 mil Pb-free F25S04PA –86DG 86MHz 8-lead PDIP 300 mil Pb-free F25S04PA –100DG 100MHz 8-lead PDIP 300 mil Pb-free F25S04PA –50HG 50MHz 8-lead DFN 5x6 mm Pb-free F25S04PA –86HG 86MHz 8-lead DFN 5x6 mm Pb-free F25S04PA –100HG 100MHz 8-lead DFN 5x6 mm Pb-free |
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