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F25S004A Datasheet(PDF) 10 Page - Elite Semiconductor Memory Technology Inc.

Part # F25S004A
Description  2.5V Only 4 Mbit Serial Flash Memory
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Manufacturer  ESMT [Elite Semiconductor Memory Technology Inc.]
Direct Link  http://www.esmt.com.tw/index.asp
Logo ESMT - Elite Semiconductor Memory Technology Inc.

F25S004A Datasheet(HTML) 10 Page - Elite Semiconductor Memory Technology Inc.

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ESMT
F25S004A
Elite Semiconductor Memory Technology Inc.
Publication Date: Jan. 2009
Revision: 1.1
10/33
capacity.
11. The Write-Enable (WREN) instruction and the Write-Status-Register (WRSR) instruction must work in conjunction of each other.
The WRSR instruction must be executed immediately (very next bus cycle) after the WREN instruction to make both instructions
effective. Both EWSR and WREN can enable WRSR, user just need to execute one of it. A successful WRSR can reset WREN.
Read (33 MHz)
The Read instruction supports up to 33 MHz, it outputs the data
starting from the specified address location. The data output
stream is continuous through all addresses until terminated by a
low to high transition on CE . The internal address pointer will
automatically increment until the highest memory address is
reached. Once the highest memory address is reached, the
address pointer will automatically increment to the beginning
(wrap-around) of the address space, i.e. for 4Mbit density, once
the data from address location 7FFFFH had been read, the next
output will be from address location 00000H.
The Read instruction is initiated by executing an 8-bit command,
03H, followed by address bits [A23-A0]. CE must remain active
low for the duration of the Read cycle. See Figure 2 for the Read
sequence.
Figure 2 : READ SEQUENCE
CE
SCK
SI
1 2 3 4 5 6 7 8
15 16
23 24
31 32
39 40
47 48
55 56
63 64
70
N+4
DOUT
N+3
DOUT
N+2
DOUT
N+1
DOUT
N
DOUT
MSB
MSB
MSB
HIGH IMPENANCE
SO
03
MODE3
MODE1
ADD.
ADD.
ADD.


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