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2SC3563 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3563 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3563 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 450 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 600 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 0.8A B 1.5 V ICBO Collector Cutoff Current VCB= 500V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1 mA hFE-1 DC Current Gain IC= 0.5A; VCE= 5V 20 hFE-2 DC Current Gain IC= 4A; VCE= 5V 8 isc Website:www.iscsemi.cn 2 |
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