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F25L004A-50DG Datasheet(PDF) 7 Page - Elite Semiconductor Memory Technology Inc. |
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F25L004A-50DG Datasheet(HTML) 7 Page - Elite Semiconductor Memory Technology Inc. |
7 / 30 page ESMT F25L004A Elite Semiconductor Memory Technology Inc. Publication Date: Jan. 2009 Revision: 1.6 7/30 Instructions Instructions are used to Read, Write (Erase and Program), and configure the F25L004A. The instruction bus cycles are 8 bits each for commands (Op Code), data, and addresses. Prior to executing any Byte-Program, Auto Address Increment (AAI) programming, Sector-Erase, Block-Erase, or Chip-Erase instructions, the Write-Enable (WREN) instruction must be executed first. The complete list of the instructions is provided in Table 5. All instructions are synchronized off a high to low transition of CE . Inputs will be accepted on the rising edge of SCK starting with the most significant bit. CE must be driven low before an instruction is entered and must be driven high after the last bit of the instruction has been shifted in (except for Read, Read-ID and Read-Status-Register instructions). Any low to high transition on CE , before receiving the last bit of an instruction bus cycle, will terminate the instruction in progress and return the device to the standby mode. Instruction commands (Op Code), addresses, and data are all input from the most significant bit (MSB) first TABLE 5: DEVICE OPERATION INSTRUCTIONS Bus Cycle 1 2 3 4 5 6 Cycle Type/ Operation 1,2 Max Freq SIN SOUT SIN SOUT SIN SOUT SIN SOUT SIN SOUT SIN SOUT Read 33 MHz 03H Hi-Z A23-A16 Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z X DOUT High-Speed-Read 0BH Hi-Z A23-A16 Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z X X X DOUT Sector-Erase 4,5 (4K Byte) 20H Hi-Z A23-A16 Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z - - - - Block-Erase 5 (64K Byte) D8H Hi-Z A23-A16 Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z - - - - Chip-Erase 5 60H C7H Hi-Z - - - - - - - - - - Byte-Program 5 02H Hi-Z A23-A16 Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z DIN Hi-Z - - Auto-Address-Increment-word programming (AAI) 6 ADH Hi-Z A23-A16 Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z DIN0 Hi-Z DIN1 Hi-Z Read-Status-Register (RDSR) 05H Hi-Z X DOUT - Note 7 - Note 7 - Note 7 - - Enable-Write-Status-Register (EWSR) 8 50H Hi-Z - - - - - - - - - - Write-Status-Register (WRSR) 8 01H Hi-Z Data Hi-Z - - -. - - - - - Write-Enable (WREN) 11 06H Hi-Z - - - - - - - - - - Write-Disable (WRDI) 04H Hi-Z - - - - - - - - - - Read-Electronic-Signature 9 (RES) ABH Hi-Z X 12H - - - - - - - - Jedec-Read-ID (JEDEC-ID) 10 9FH Hi-Z X 8CH X 20H X 13H - - - - 90H (A0=0) 8CH 12H Read-ID (RDID) 90H (A0=1) Hi-Z A23-A16 Hi-Z A15-A8 Hi-Z A7-A0 Hi-Z X 12H X 8CH Enable SO to output RY/BY# Status during AAI (EBSY) 70H Hi-Z - - - - - - - - Disable SO to output RY/BY# Status during AAI (DBSY) 50MHz 100MHz 80H Hi-Z - - - - - - - - 1. Operation: SIN = Serial In, SOUT = Serial Out 2. X = Dummy Input Cycles (VIL or VIH); - = Non-Applicable Cycles (Cycles are not necessary) 3. One bus cycle is eight clock periods. 4. Sector addresses: use AMS-A12, remaining addresses can be VIL or VIH 5. Prior to any Byte-Program, Sector-Erase, Block-Erase,or Chip-Erase operation, the Write-Enable (WREN) instruction must be executed. 6. To continue programming to the next sequential address location, enter the 8-bit command, ADH, followed by the data to be programmed. 7. The Read-Status-Register is continuous with ongoing clock cycles until terminated by a low to high transition on CE . 8. The Enable-Write-Status-Register (EWSR) instruction and the Write-Status-Register (WRSR) instruction must work in conjunction of each other. The WRSR instruction must be executed immediately (very next bus cycle) after the EWSR instruction to make both instructions effective. 9. The Read-Electronic-Signature is continuous with on going clock cycles until terminated by a low to high transition on CE . |
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