2MHz, High-Brightness LED Drivers with

Integrated MOSFET and High-Side Current Sense

_______________________________________________________________________________________

3

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

INTERNAL MOSFET

0.85

1.7

Drain-to-Source Resistance

1

2

LX Leakage Current

10

μA

DIM INPUT

DIM Input-Voltage High

2.8

V

DIM Input-Voltage Low

0.6

V

DIM Turn-On Time

200

ns

DIM Input Leakage High

15

μA

DIM Input Leakage Low

-3

0

μA

THERMAL SHUTDOWN

Thermal-Shutdown Threshold

Temperature rising

165

°C

Thermal-Shutdown Threshold

Hsysteresis

10

°C

THERMAL FOLDBACK

Thermal-Foldback Enable

Threshold Voltage

1.9

2.0

2.12

V

Thermal-Foldback Slope

0.75

1/V

TEMP_I Output Bias Current

25

26.5

28

μA

ELECTRICAL CHARACTERISTICS (continued)

EFFICIENCY

55

45

35

25

15

75

80

85

90

95

100

70

565

1 LED

3 LEDs

5 LEDs

7 LEDs9 LEDs

11 LEDs13 LEDs 15 LEDs

9 LEDs

DUTY CYCLE

55

45

35

25

15

10

20

30

40

50

60

70

80

90

100

0

565

1 LED

3 LEDs

5 LEDs

7 LEDs

15 LEDs

11 LEDs

13 LEDs

FREQUENCY

55

45

35

25

15

10

20

30

40

50

60

70

80

90

100

0

565

1 LED

3 LEDs

5 LEDs

7 LEDs

9 LEDs

11 LEDs

13 LEDs

15 LEDs

Typical Operating Characteristics

unless otherwise noted.)