AGR26125E

125 W, 2.5 GHz—2.7 GHz, N-Channel E-Mode, Lateral MOSFET

Introduction

The AGR26125E is a high-voltage, gold-metalized,

enhancement mode, laterally diffused metal oxide

semiconductor (LDMOS) RF power transistor suit-

able for ultrahigh-frequency (UHF) applications

including multichannel multipoint distribution service

(MMDS) for broadcasting and communications.

Figure 1. Available Packages

Features

Typical pulsed P1dB, 6 µs pulse at 10% duty: 125 W.

Typical performance for MMDS systems.

adjacent channel BW = 3.84 MHz, 5 MHz offset;

alternate channel BW = 3.84 MHz, 10 MHz offset.

Typical P/A ratio of 9.8 dB at 0.01% (probability)

CCDF*:

— Output power: 20 W

— Power gain: 11.5 dB.

— Power Added Efficiency (PAE): 19%.

— ACLR1: –35 dBc.

— ACLR2: –37 dBc.

High-reliability, gold-metalization process.

Low hot carrier injection (HCI) induced bias drift

over 20 years.

Internally matched.

High gain, efficiency, and linearity.

Integrated ESD protection.

Device can withstand a 10:1 voltage standing wave

ratio (VSWR) at 28 Vdc, 2600 MHz, 125 W contin-

uous wave (CW) output power.

Large signal impedance parameters available.

*The test signal utilized is 4-channel W-CDMA Test Model 1. This

test signal provides an equivalent reference (occupied bandwidth

and waveform EPF) for the actual performance with an MMDS

waveform.

Table 1. Thermal Characteristics

Table 2. Absolute Maximum Ratings*

* Stresses in excess of the absolute maximum ratings can cause

permanent damage to the device. These are absolute stress rat-

ings only. Functional operation of the device is not implied at

these or any other conditions in excess of those given in the

operational sections of the data sheet. Exposure to absolute

maximum ratings for extended periods can adversely affect

device reliability.

Table 3. ESD Rating*

* Although electrostatic discharge (ESD) protection circuitry has

been designed into this device, proper precautions must be

taken to avoid exposure to ESD and electrical overstress (EOS)

during all handling, assembly, and test operations. Agere

employs a human-body model (HBM), a machine model (MM),

and a charged-device model (CDM) qualification requirement in

order to determine ESD-susceptibility limits and protection

design evaluation. ESD voltage thresholds are dependent on the

circuit parameters used in each of the models, as defined by

JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and

JESD22-C101A (CDM) standards.

Caution: MOS devices are susceptible to damage from elec-

trostatic charge. Reasonable precautions in han-

dling and packaging MOS devices should be

observed.

AGR26125EU (unflanged) AGR26125EF (flanged)

)

5B 03 STYLE 1

Parameter

Sym

Value Unit

Thermal Resistance,

Junction to Case:

AGR26125EU

AGR26125EF

0.5

0.5

°C/W

°C/W

Parameter

Sym Value Unit

Drain-source Voltage

65

Vdc

Gate-source Voltage

AGR26125EU

AGR26125EF

350

350

W

W

Derate Above 25 °C:

AGR26125EU

AGR26125EF

—

—

2.0

2.0

W/°C

W/°C

Operating Junction Tempera-

ture

200

°C

AGR26125E

Minimum (V)

Class

HBM

500

1B

MM

50

A

CDM

1500

4

PEAK Devices