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MAX1386AETM+ Datasheet(PDF) 1 Page - Maxim Integrated Products |
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MAX1386AETM+ Datasheet(HTML) 1 Page - Maxim Integrated Products |
1 / 52 page For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com. General Description The MAX1385/MAX1386 set and control bias conditions for dual RF LDMOS power devices found in cellular base stations. Each device includes a high-side cur- rent-sense amplifier with programmable gains of 2, 10, and 25 to monitor LDMOS drain current over the 20mA to 5A range. Two external diode-connected transistors monitor LDMOS temperatures while an internal temper- ature sensor measures the local die temperature of the MAX1385/MAX1386. A 12-bit ADC converts the pro- grammable-gain amplifier (PGA) outputs, external/inter- nal temperature readings, and two auxiliary inputs. The two gate-drive channels, each consisting of 8-bit coarse and 10-bit fine DACs and a gate-drive amplifier, generate a positive gate voltage to bias the LDMOS devices. The MAX1385 includes a gate-drive amplifier with a gain of 2 and the MAX1386 gate-drive amplifier provides a gain of 4. The 8-bit coarse and 10-bit fine DACs allow up to 18 bits of resolution. The MAX1385/ MAX1386 include autocalibration features to minimize error over time, temperature, and supply voltage. The MAX1385/MAX1386 feature an I2C/SPI™-compatible serial interface. Both devices operate from a 4.75V to 5.25V analog supply (3.2mA supply current), a 2.7V to 5.25V digital supply (3.1mA supply current), and a 4.75V to 11.0V gate-drive supply (4.5mA supply current). The MAX1385/MAX1386 are available in a 48-pin thin QFN package. Applications RF LDMOS Bias Control in Cellular Base Stations Industrial Process Control Features ♦ Integrated High-Side Drain Current-Sense PGA with Gain of 2, 10, or 25 ♦ ±0.5% Accuracy for Sense Voltage Between 75mV and 250mV ♦ Full-Scale Sense Voltage of 100mV with Gain of 25 ♦ Full-Scale Sense Voltage of 250mV with Gain of 10 ♦ Common-Mode Range of 5V to 30V Drain Voltage for LDMOS ♦ Adjustable Low Noise 0 to 5V, 0 to 10V Output Gate-Bias Voltage Ranges with ±10mA Gate Drive ♦ Fast Clamp to 0V for LDMOS Protection ♦ 8-Bit DAC Control of Gate-Bias Voltage ♦ 10-Bit DAC Control of Gate-Bias Offset with Temperature ♦ Internal Die Temperature Measurement ♦ External Temperature Measurement by Diode- Connected Transistor (2N3904) ♦ Internal 12-Bit ADC Measurement of Temperature, Current, and Voltages ♦ Selectable I2C-/SPI-Compatible Serial Interface 400kHz/1.7MHz/3.4MHz I2C-Compatible Control for Settings and Data Measurement 16MHz SPI-Compatible Control for Settings and Data Measurement ♦ Internal 2.5V Reference ♦ Three Address Inputs to Control Eight Devices in I2C Mode Dual RF LDMOS Bias Controllers with I2C/SPI Interface ________________________________________________________________ Maxim Integrated Products 1 19-4456; Rev 0; 2/09 EVALUATION KIT AVAILABLE Ordering Information/Selector Guide PART TEMP RANGE PIN-PACKAGE TEMP ERROR (°C) VGATE (V) MAX1385AETM+** -40°C to +85°C 48 Thin QFN-EP* ±1 5 MAX1385BETM+ -40°C to +85°C 48 Thin QFN-EP* ±2 5 MAX1386AETM+** -40°C to +85°C 48 Thin QFN-EP* ±1 10 MAX1386BETM+** -40°C to +85°C 48 Thin QFN-EP* ±2 10 SPI is a trademark of Motorola, Inc. * EP = Exposed pad. ** Future product—contact factory for availability. + Denotes a lead(Pb)-free/RoHS-compliant package. Pin Configuration and Typical Operating Circuit (I2C Mode) appear at end of data sheet. |
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