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2SC5606-T1-A Datasheet(PDF) 1 Page - NEC |
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2SC5606-T1-A Datasheet(HTML) 1 Page - NEC |
1 / 7 page The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. DATA SHEET Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. NPN SILICON RF TRANSISTOR 2SC5606 NPN SILICON RF TRANSISTOR FOR LOW NOISE · HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG) Document No. PU10781EJ01V0DS (1st edition) (Previous No. P14658EJ3V0DS00) Date Published August 2009 NS Printed in Japan 1999, 2009 FEATURES • Suitable for high-frequency oscillation • fT = 25 GHz technology adopted • 3-pin ultra super minimold (19, 1608 PKG) package ORDERING INFORMATION Part Number Order Number Package Quantity Supplying Form 2SC5606 2SC5606-A 50 pcs (Non reel) • 8 mm wide embossed taping 2SC5606-T1 2SC5606-T1-A 3-pin ultra super minimold (19, 1608 PKG) (Pb-Free) 3 kpcs/reel • Pin 3 (collector) face the perforation side of the tape Remark To order evaluation samples, please contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 °C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 15 V Collector to Emitter Voltage VCEO 3.3 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 35 mA Total Power Dissipation Ptot Note 115 mW Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Note Mounted on 1.08 cm 2 × 1.0 mm (t) glass epoxy substrate <R> |
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