2003, 2009

FEATURES

• The device is an ideal choice for low noise, high-gain amplification

• 6-pin lead-less minimold (M16, 1208 PKG)

ORDERING INFORMATION

Part Number

Order Number

Package

Quantity

Supplying Form

NESG2031M16

NESG2031M16-A

50 pcs

(Non reel)

NESG2031M16-T3

NESG2031M16-T3-A

6-pin lead-less minimold

(M16, 1208 PKG)

(Pb-Free)

10 kpcs/reel

• 8 mm wide embossed taping

• Pin 1 (Collector), Pin 6 (Emitter) face the

perforation side of the tape

Remark To order evaluation samples, please contact your nearby sales office.

Unit sample quantity is 50 pcs.

°C)

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

13.0

V

Collector to Emitter Voltage

5.0

V

Emitter to Base Voltage

1.5

V

Collector Current

35

mA

Total Power Dissipation

Note

175

mW

Junction Temperature

150

°C

Storage Temperature

−65 to +150

°C

Note Mounted on 1.08 cm

<R>

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

DATA SHEET

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

NPN SILICON GERMANIUM RF TRANSISTOR

NESG2031M16

NPN SiGe RF TRANSISTOR FOR

LOW NOISE, HIGH-GAIN AMPLIFICATION

6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)

Document No. PU10394EJ03V0DS (3rd edition)

Date Published September 2009 NS

Printed in Japan