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NDP04N60Z Datasheet(PDF) 4 Page - ON Semiconductor |
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NDP04N60Z Datasheet(HTML) 4 Page - ON Semiconductor |
4 / 8 page NDF04N60Z, NDP04N60Z, NDD04N60Z http://onsemi.com 4 TYPICAL CHARACTERISTICS Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) 200 150 100 50 0 0 800 20 10 5 0 0 5 10 15 Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) 100 10 1 1 10 100 1000 0.9 0.8 0.7 1.0 0.6 0.5 0.4 0 1 2 3 4 Figure 11. Maximum Rated Forward Biased Safe Operating Area for NDF04N60Z VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 100 10 1 0.01 0.1 1 10 100 VGS = 0 V TJ = 25°C Ciss Coss Crss 15 20 TJ = 25°C ID = 4 A QT Qgs Qgd VDS VDD = 300 V ID = 4 A VGS = 10 V td(off) td(on) tr tf TJ = 25°C VGS = 0 V VGS = 10 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 100 ms 10 ms 10 ms 1 ms dc 400 1000 1200 0 100 200 300 400 VGS 600 200 |
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