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APT50GT60BRG Datasheet(PDF) 1 Page - Microsemi Corporation |
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APT50GT60BRG Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 6 page APT50GT60BR_SR(G) TYPICAL PERFORMANCE CURVES The Thunderblot IGBT® is a new generation of high voltage power IGBTs.Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed. • LowForwardVoltageDrop •HighFreq.Switchingto100KHz • LowTailCurrent •UltraLowLeakageCurrent • RBSOAandSCSOARated Thunderbolt IGBT® MAXIMUM RATINGS All Ratings: T C = 25°C unless otherwise specified. STATICELECTRICALCHARACTERISTICS Characteristic/TestConditions Collector-Emitter Breakdown Voltage (V GE = 0V, I C = 2mA) Gate Threshold Voltage (V CE = VGE, I C = 1mA, Tj = 25°C) Collector-Emitter On Voltage (V GE = 15V, IC = 50A, Tj = 25°C) Collector-Emitter On Voltage (V GE = 15V, IC = 50A, Tj = 125°C) Collector Cut-off Current (V CE = 600V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (V CE = 600V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (V GE = ±20V) Symbol V (BR)CES V GE(TH) V CE(ON) I CES I GES Units Volts µA nA Symbol V CES V GE I C1 I C2 I CM SSOA P D T J,TSTG T L APT50GT60BR_SR(G) 600 ±30 110 52 150 150A @ 600V 446 -55 to 150 300 UNIT Volts Amps Watts °C Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current 7 @ T C = 25°C Continuous Collector Current @ T C = 110°C Pulsed Collector Current 1 Switching Safe Operating Area @ T J = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. MIN TYP MAX 600 3 4 5 1.7 2.0 2.5 2.2 25 TBD 120 G C E TO -247 G C E D3PAK G C E (S) (B) 600V APT50GT60BR APT50GT60SR APT50GT60BRG* APT50GT60SRG* *GDenotesRoHSCompliant,PbFreeTerminalFinish. MicrosemiWebsite-http://www.microsemi.com |
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