APT50GT60BRDLG datasheet(3/9 Pages) MICROSEMI

Part #	APT50GT60BRDLG

Description	Resonant Mode Combi IGBT

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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APT50GT60BRDL(G)

TYPICAL PERFORMANCE CURVES

250µs PULSE

TEST<0.5 % DUTY

CYCLE

160

140

120

100

80

60

40

10

0

160

140

120

100

80

60

40

20

0

5

4

3

2

1

0

1.15

1.10

1.05

1.00

0.95

0.90

0.85

0.80

0.75

0.70

0

1

2

3

4

5

0

5

10

15

20

0

2

4

6

8

10

12

0

50

100

150

200

250

6

8

10

12

14

16

0

25

50

75

100

125

-50

-25

0

25

50

75

100 125 150

-50

-25

0

25

50

75

100 125 150

200

180

160

140

120

100

80

60

40

20

0

16

14

12

10

8

6

4

2

0

3.5

3.0

2.5

2.0

1.5

1.0

0.5

0

160

140

120

100

80

60

40

20

0

T

J = 125°C

T

J = 25°C

T

J = 25°C.

250µs PULSE TEST

<0.5 % DUTY CYCLE

V

GE = 15V.

250µs PULSE TEST

<0.5 % DUTY CYCLE

T

J = 125°C

T

J = 25°C

V

GE

= 15V

V

CE

, COLLECTER-TO-EMITTER VOLTAGE (V)

V

CE

, COLLECTER-TO-EMITTER VOLTAGE (V)

FIGURE 1, Output Characteristics(T

J

= 25°C)

FIGURE 2, Output Characteristics (T

J

= 125°C)

V

GE

, GATE-TO-EMITTER VOLTAGE (V)

GATE CHARGE (nC)

FIGURE 3, Transfer Characteristics

FIGURE 4, Gate Charge

V

GE

, GATE-TO-EMITTER VOLTAGE (V)

T

J

, Junction Temperature (°C)

FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage

FIGURE 6, On State Voltage vs Junction Temperature

T

J

, JUNCTION TEMPERATURE (°C)

T

C

, CASE TEMPERATURE (°C)

FIGURE 7, Threshold Voltage vs. Junction Temperature

FIGURE 8, DC Collector Current vs Case Temperature

I

C

= 25A

I

C

= 50A

I

C

= 100A

I

C

= 25A

I

C

= 50A

I

C

= 100A

T

J = -55°C

15V

11V

10V

9V

13V

8V

7V

6V

T

J = -55°C

I

C

= 50A

T

J

= 25°C

V

CE

= 480V

V

CE

= 300V

V

CE

= 120V

Lead Temperature

Limited

Lead Temperature

Limited

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APT50GT60BRDLG Datasheet(PDF) 3 Page - Microsemi Corporation

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