APT50GS60SRDQ2G datasheet(3/7 Pages) MICROSEMI

Part #	APT50GS60SRDQ2G

Description	Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode

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Manufacturer	MICROSEMI [Microsemi Corporation]

Direct Link	http://www.microsemi.com

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V

CE(ON), COLLECTER-TO-EMITTER VOLTAGE (V)

V

CE, COLLECTER-TO-EMITTER VOLTAGE (V)

FIGURE 1, Output Characteristics

FIGURE 2, Output Characteristics

V

GE, GATE-TO-EMITTER VOLTAGE (V)

V

GE, GATE-TO-EMITTER VOLTAGE (V)

FIGURE 3, Transfer Characteristics

FIGURE 4, On State Voltage vs Gate-to- Emitter Voltage

T

J, Junction Temperature (°C)

GATE CHARGE (nC)

FIGURE 5, On State Voltage vs Junction Temperature

FIGURE 6, Gate Charge

V

CE, COLLECTOR-TO-EMITTER VOLTAGE (V)

T

C, CASE TEMPERATURE (°C)

FIGURE 7, Capacitance vs Collector-To-Emitter Voltage

FIGURE 8, DC Collector Current vs Case Temperature

0

1

2

3

4

5

6

0

5

10

15

20

25

30

0

2

4

6

8

10

12

6

8

10

12

14

16

0

25

50

75

100

125

150

0

50

100

150

200

250

0

100

200

300

400

500

600

25

50

75

100

125

150

125

100

75

50

25

0

150

125

100

75

50

25

0

5

4

3

2

1

0

5000

1000

100

10

250

225

200

175

150

125

100

75

50

25

0

6

5

4

3

2

1

0

16

14

12

10

8

6

4

2

0

100

90

80

70

60

50

40

30

20

10

0

V

CE = 480V

V

CE = 300V

V

CE = 120V

250µs PULSE

TEST<0.5 % DUTY

CYCLE

11V

9V

8V

7V

10V

6V

T

J = 125°C

T

J = 25°C

I

C = 25A

I

C = 50A

I

C = 100A

V

GE = 15V.

250µs PULSE TEST

<0.5 % DUTY CYCLE

I

C = 100A

I

C = 50A

I

C = 25A

VGE = 15V

T

J = 125°C

T

J = 25°C

T

J = 150°C

TJ = 125°C

IC = 25A

TJ = 25°C

T

J = 25°C.

250µs PULSE TEST

<0.5 % DUTY CYCLE

C

oes

C

ies

C

res

VGE = 13 & 15V

TYPICAL PERFORMANCE CURVES

APT50GS60B_SRDQ2(G)

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APT50GS60SRDQ2G Datasheet(PDF) 3 Page - Microsemi Corporation

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