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APT50GN60SG Datasheet(PDF) 1 Page - Microsemi Corporation

Part # APT50GN60SG
Description  Resonant Mode Combi IGBT
Download  6 Pages
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APT50GN60SG Datasheet(HTML) 1 Page - Microsemi Corporation

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TYPICAL PERFORMANCE CURVES
APT50GN60B_S(G)
MAXIMUM RATINGS
All Ratings: T
C
= 25°C unless otherwise specified.
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 4mA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 800µA, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 50A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 25°C)
2
Collector Cut-off Current (V
CE
= 600V, V
GE
= 0V, T
j
= 125°C)
2
Gate-Emitter Leakage Current (V
GE
= ±20V)
Intergrated Gate Resistor
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
I
CES
I
GES
R
G(int)
Units
Volts
µA
nA
Ω
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
SSOA
P
D
T
J
,T
STG
T
L
APT50GN60B(G)
600
±30
107
64
150
150A @ 600V
366
-55 to 175
300
UNIT
Volts
Amps
Watts
°C
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
8 @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
@ T
C
= 175°C
Switching Safe Operating Area @ T
J
= 175°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and a
slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive
design and minimizes losses.
600V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
• 6µs Short Circuit Capability
• 175°C Rated
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MIN
TYP
MAX
600
5.0
5.8
6.5
1.05
1.45
1.85
1.7
25
TBD
600
N/A
G
C
E
APT50GN60B
APT50GN60S
APT50GN60B(G)
APT50GN60S(G)
600V
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
TO
-24
7
G
C
E
D3PAK
G
C
E
(S)
(B)
Microsemi Website - http://www.microsemi.com


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