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APT50GN60SG Datasheet(PDF) 1 Page - Microsemi Corporation |
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APT50GN60SG Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 6 page TYPICAL PERFORMANCE CURVES APT50GN60B_S(G) MAXIMUM RATINGS All Ratings: T C = 25°C unless otherwise specified. STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (V GE = 0V, I C = 4mA) Gate Threshold Voltage (V CE = V GE , I C = 800µA, T j = 25°C) Collector-Emitter On Voltage (V GE = 15V, I C = 50A, T j = 25°C) Collector-Emitter On Voltage (V GE = 15V, I C = 50A, T j = 125°C) Collector Cut-off Current (V CE = 600V, V GE = 0V, T j = 25°C) 2 Collector Cut-off Current (V CE = 600V, V GE = 0V, T j = 125°C) 2 Gate-Emitter Leakage Current (V GE = ±20V) Intergrated Gate Resistor Symbol V (BR)CES V GE(TH) V CE(ON) I CES I GES R G(int) Units Volts µA nA Ω Symbol V CES V GE I C1 I C2 I CM SSOA P D T J ,T STG T L APT50GN60B(G) 600 ±30 107 64 150 150A @ 600V 366 -55 to 175 300 UNIT Volts Amps Watts °C Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current 8 @ T C = 25°C Continuous Collector Current @ T C = 110°C Pulsed Collector Current 1 @ T C = 175°C Switching Safe Operating Area @ T J = 175°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses. • 600V Field Stop • Trench Gate: Low VCE(on) • Easy Paralleling • 6µs Short Circuit Capability • 175°C Rated Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MIN TYP MAX 600 5.0 5.8 6.5 1.05 1.45 1.85 1.7 25 TBD 600 N/A G C E APT50GN60B APT50GN60S APT50GN60B(G) APT50GN60S(G) 600V *G Denotes RoHS Compliant, Pb Free Terminal Finish. TO -24 7 G C E D3PAK G C E (S) (B) Microsemi Website - http://www.microsemi.com |
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