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APT46GA90JD40 Datasheet(PDF) 1 Page - Microsemi Corporation |
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APT46GA90JD40 Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 9 page Absolute Maximum Ratings Symbol Parameter Ratings Unit V ces Collector Emitter Voltage 900 V I C1 Continuous Collector Current @ T C = 25°C 87 A I C2 Continuous Collector Current @ T C = 100°C 46 I CM Pulsed Collector Current 1 136 V GE Gate-Emitter Voltage 2 ±30 V P D Total Power Dissipation @ T C = 25°C 284 W SSOA Switching Safe Operating Area @ T J = 150°C 136A @ 900V T J, TSTG Operating and Storage Junction Temperature Range -55 to 150 °C Combi (IGBT and Diode) TYPICAL APPLICATIONS • ZVS phase shifted and other full bridge • Half bridge • High power PFC boost • Welding • UPS, solar, and other inverters • High frequency, high efficiency industrial FEATURES • Fast switching with low EMI • Very Low E off for maximum efficiency • Ultra low C res for improved noise immunity • Low conduction loss • Low gate charge • Increased intrinsic gate resistance for low EMI • RoHS compliant APT46GA90JD40 900V APT46GA90JD40 POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low E off is achieved through leading technology silicon design and lifetime control processes. A reduced E off - V CE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of C res/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency. Microsemi Website - http://www.microsemi.com High Speed PT IGBT Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Unit V BR(CES) Collector-Emitter Breakdown Voltage V GE = 0V, IC = 1.0mA 900 V V CE(on) Collector-Emitter On Voltage V GE = 15V, I C = 47A T J = 25°C 2.5 3.1 T J = 125°C 2.2 V GE(th) Gate Emitter Threshold Voltage V GE =VCE , IC = 1mA 3 4.5 6 I CES Zero Gate Voltage Collector Current V CE = 900V, V GE = 0V T J = 25°C 350 μA T J = 125°C 1500 I GES Gate-Emitter Leakage Current V GS = ±30V ±100 nA SO T-2 27 ISOTOP® file # E145592 "UL Recognized" G E E C |
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