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T431616A-7SI Datasheet(PDF) 6 Page - Taiwan Memory Technology |
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T431616A-7SI Datasheet(HTML) 6 Page - Taiwan Memory Technology |
6 / 31 page TE CH tm T431616A Taiwan Memory Technology, Inc. reserves the right P. 6 Publication Date: DEC. 2000 to change products or specifications without notice. Revision: C DC CHARACTERISTICS TA = -5 to 70 °C / -40 to +85 °C , VIH(min)/VIL(max)=2.0V/0.8V Speed version Parameter Symbol -6 -7 -8 -10 Unit Test Condition Note Operating Current ( One Bank Active) ICC1 160 150 140 120 mA Burst Length = 1 tRC≥tRC(min) ,tCC≥tCC(min),IOL= 0 mA 1,3 ICC2P 2 CKE ≤ VIL(max),tCC=15ns Precharge Standby Current in power- down mode ICC2PS 2 mA CKE ≤ VIL(max),CLK ≤ VIL(max), tCC =• 3 ICC2N 30 CKE ≥ VIH(min), CS ≥ VIH(min),tCC=15ns Input signals are changed one time during 30ns Precharge Standby Current in non power-down mode ICC2NS 2 mA CKE ≥VIH(min),CLK ≤ VIL(min),tCC=• Input signals are stable 3 ICC3P 10 CKE ≤ VIL(max),tCC=15ns Active Standby Current in power- down mode ICC3PS 10 mA CKE ≤ VIL(max),CLK ≤ VIL(max),tCC=• 3 ICC3N 40 CKE ≥VIH(min), CS ≥VIH(min),tCC=15ns Input signals are changed one time during 30ns Active Standby Current in non power-down mode (One Bank Active) ICC3NS 10 mA CKE ≥VIH(min),CLK ≤ VIL(min),tCC=• Input signals are stable 3 180 170 160 140 CAS Latency 3 Operating Current (Burst Mode) ICC4 180 170 160 140 mA CAS Latency 2 IOL=0 mA,Page Burst All Band Activated tCCD= tCCD(min) 1,3 Refresh Current ICC5 180 170 160 140 mA tRC ≥tRC(min) 2,3 Self refresh Current ICC6 1 mA CKE ≤ 0.2V Note: 1. Measured with output open. Addresses are changed only one time during tCC(min) . 2. Refresh period is 32ms. Addresses are changed only one time during tCC(min) . 3. tCC : Clock cycle time. tRC : Row cycle time. tCCD : Column address to column address delay time. |
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