T431616A-7SI datasheet(6/31 Pages) TMT

Part #	T431616A-7SI

Description	1M x 16 SDRAM????

Download	31 Pages

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Manufacturer	TMT [Taiwan Memory Technology]

Direct Link	http://www.tmtech.com.tw

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TE

CH

tm

T431616A

Taiwan Memory Technology, Inc. reserves the right P. 6

Publication Date: DEC. 2000

to change products or specifications without notice.

Revision: C

DC CHARACTERISTICS

TA = -5 to 70

°C / -40 to +85 °C , VIH(min)/VIL(max)=2.0V/0.8V

Speed version

Parameter

Symbol

-6

-7

-8

-10

Unit

Test Condition

Note

Operating Current

( One Bank Active)

ICC1

160

150

140

120 mA

Burst Length = 1

tRC≥tRC(min) ,tCC≥tCC(min),IOL= 0 mA

1,3

ICC2P

2

CKE

≤ VIL(max),tCC=15ns

Precharge Standby

Current in power-

down mode

ICC2PS

2

mA

CKE

≤ VIL(max),CLK ≤ VIL(max), tCC =•

3

ICC2N

30

CKE

≥ VIH(min), CS ≥ VIH(min),tCC=15ns

Input signals are changed one time during 30ns

Precharge Standby

Current in non

power-down mode

ICC2NS

2

mA

CKE

≥VIH(min),CLK

≤ VIL(min),tCC=•

Input signals are stable

3

ICC3P

10

CKE

≤ VIL(max),tCC=15ns

Active Standby

Current in power-

down mode

ICC3PS

10

mA

CKE

≤ VIL(max),CLK ≤ VIL(max),tCC=•

3

ICC3N

40

CKE

≥VIH(min), CS ≥VIH(min),tCC=15ns

Input signals are changed one time during 30ns

Active Standby

Current in non

power-down mode

(One Bank Active) ICC3NS

10

mA

CKE

≥VIH(min),CLK

≤ VIL(min),tCC=•

Input signals are stable

3

180

170

160

140

CAS Latency 3

Operating Current

(Burst Mode)

ICC4

180

170

160

140

mA

CAS Latency 2

IOL=0 mA,Page Burst

All Band Activated

tCCD= tCCD(min)

1,3

Refresh Current

ICC5

180

170

160

140 mA tRC ≥tRC(min)

2,3

Self refresh

Current

ICC6

1

mA

CKE

≤ 0.2V

Note:

1. Measured with output open. Addresses are changed only one time during

tCC(min) .

2. Refresh period is 32ms. Addresses are changed only one time during

tCC(min) .

3.

tCC : Clock cycle time.

tRC : Row cycle time.

tCCD : Column address to column address delay time.

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