APTGF30TL601G

www.microsemi.com

3- 9

CR1 to CR4 diode ratings and characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

Maximum Peak Repetitive Reverse Voltage

600

V

25

Maximum Reverse Leakage Current

500

µA

DC Forward Current

Tc = 80°C

15

A

2

2.4

2.5

Diode Forward Voltage

1.6

V

20

Reverse Recovery Time

105

ns

21

Reverse Recovery Charge

di/dt =200A/µs

250

nC

Reverse Recovery Energy

di/dt =1000A/µs

0.24

mJ

Junction to Case Thermal Resistance

2

°C/W

CR5 & CR6 diode ratings and characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

Maximum Peak Repetitive Reverse Voltage

600

V

25

Maximum Reverse Leakage Current

500

µA

DC Forward Current

Tc = 80°C

30

A

1.8

2.2

2.2

Diode Forward Voltage

1.5

V

25

Reverse Recovery Time

160

ns

35

Reverse Recovery Charge

di/dt =200A/µs

480

nC

Reverse Recovery Energy

di/dt =1000A/µs

0.6

mJ

Junction to Case Thermal Resistance

1.2

°C/W

Thermal and package characteristics

Symbol

Characteristic

Min

Typ

Max

Unit

RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz

2500

V

Operating junction temperature range

-40

150

Storage Temperature Range

-40

125

Operating Case Temperature

-40

100

°C

Torque Mounting torque

To heatsink

M4

2.5

4.7

N.m

Wt

Package Weight

80

g