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APTGF15X120T3G Datasheet(PDF) 5 Page - Microsemi Corporation

Part # APTGF15X120T3G
Description  3 Phase bridge NPT IGBT Power Module
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Manufacturer  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTGF15X120T3G Datasheet(HTML) 5 Page - Microsemi Corporation

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APTGF15X120T3G
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5- 6
VGE = 15V
50
55
60
65
70
75
0
5
10
15
20
25
30
35
ICE, Collector to Emitter Current (A)
Turn-On Delay Time vs Collector Current
VCE = 600V
RG = 33Ω
VGE=15V,
TJ=25°C
VGE=15V,
TJ=125°C
200
250
300
350
400
0
5
10
15
20
25
30
35
ICE, Collector to Emitter Current (A)
Turn-Off Delay Time vs Collector Current
VCE = 600V
RG = 33Ω
VGE=15V
0
40
80
120
160
0
5
10
15
20
25
30
35
ICE, Collector to Emitter Current (A)
Current Rise Time vs Collector Current
VCE = 600V
RG = 33Ω
TJ = 25°C
TJ = 125°C
20
25
30
35
40
45
50
0
5
10
15
20
25
30
35
ICE, Collector to Emitter Current (A)
Current Fall Time vs Collector Current
VCE = 600V, VGE = 15V, RG = 33Ω
TJ=25°C,
VGE=15V
TJ=125°C,
VGE=15V
0
1
2
3
4
5
6
7
8
0
5
10
15
20
25
30
35
ICE, Collector to Emitter Current (A)
Turn-On Energy Loss vs Collector Current
VCE = 600V
RG = 33Ω
TJ = 25°C
TJ = 125°C
0
0.5
1
1.5
2
2.5
0
5
10
15
20
25
30
35
ICE, Collector to Emitter Current (A)
Turn-Off Energy Loss vs Collector Current
VCE = 600V
VGE = 15V
RG = 33Ω
Eon, 15A
Eoff, 15A
0
1
2
3
4
5
6
7
8
020
40
60
80
100
120
Gate Resistance (Ohms)
Switching Energy Losses vs Gate Resistance
VCE = 600V
VGE = 15V
TJ= 125°C
0
5
10
15
20
25
30
35
0
400
800
1200
Reverse Bias Safe Operating Area
VCE, Collector to Emitter Voltage (V)


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