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APT94N65B2C3G Datasheet(PDF) 1 Page - Microsemi Corporation |
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APT94N65B2C3G Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 5 page T-Max TM 650V 94A APT94N65B2C3 APT94N65B2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. MAXIMUM RATINGS All Ratings per die: T C = 25°C unless otherwise specified. CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Characteristic / Test Conditions Drain-Source Breakdown Voltage (V GS = 0V, ID = 500μA) Drain-Source On-State Resistance 3 (V GS = 10V, ID = 60A) Zero Gate Voltage Drain Current (V DS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (V DS = 600V, VGS = 0V, TC = 150°C) Gate-Source Leakage Current (V GS = ±20V, VDS = 0V) Gate Threshold Voltage (V DS = VGS, ID = 5.8mA) Symbol V DSS I D I DM V GS P D T J,TSTG T L dv/dt I AR E AR E AS Parameter Drain-Source Voltage Continuous Drain Current @ T C = 25°C Continuous Drain Current @ T C = 100°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Total Power Dissipation @ T C = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 94A, TJ = 125°C) Avalanche Current 2 Repetitive Avalanche Energy 2 ( Id = 7A, Vdd = 50V ) Single Pulse Avalanche Energy ( Id = 3.5A, Vdd = 50V ) UNIT Volts Amps Volts Watts °C V/ns Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol BV (DSS) R DS(on) I DSS I GSS V GS(th) UNIT Volts Ohms μA nA Volts APT94N65B2C3S(G) 650 94 60 282 20 415 -55 to 150 260 50 7 1 1800 • Ultra Low R DS(ON) • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated • Dual die (parallel) • Popular T-MAX Package Super Junction MOSFET MIN TYP MAX 650 0.03 0.035 1.0 50 100 ±200 2.1 3 3.9 C Power Semiconductors O O LMOS "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade- mark of Infineon Technologies AG." G D S Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. Microsemi Website - http://www.microsemi.com |
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